Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

文件：164.27 Kbytes 页数：14 Pages

Infineon

英飞凌

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.09098 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：304.59 Kbytes 页数：14 Pages

Infineon

英飞凌

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：594.28 Kbytes 页数：14 Pages

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Isc N-Channel MOSFET Transistor

文件：270.25 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 650 V (D-S) MOSFET

文件：1.09089 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

500V-900V CoolMOS™ N-Channel Power MOSFET

• New revolutionary high voltage technology\n• Ultra low gate charge\n• Periodic avalanche rated\n• Extreme dv/dt rated\n• High peak current capability\n• Improved transconductance\n• Fully isolated package (2500 VAC; 1 minute)\n• Pb-free lead plating; RoHS compliant\n\n\n优势:;

Infineon

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Cool MOS™ Power Transistor

Infineon

英飞凌