SP1255P Series 0.5pF, 12kV Diode Array for μUSB

Description The SP1255P integrates three channels of ultra-low capacitance steering diodes and a low voltage TVS diode to provide maximum protection of the USB data and ID pins against ESD per the IEC 61000-4-2 standard. An additional 12V TVS diode is included to provide lightning surge prot

文件：964.61 Kbytes 页数：5 Pages

Littelfuse

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SP1255P Series 0.5pF, 12kV Diode Array for μUSB

Description The SP1255P integrates three channels of ultra-low capacitance steering diodes and a low voltage TVS diode to provide maximum protection of the USB data and ID pins against ESD per the IEC 61000-4-2 standard. An additional 12V TVS diode is included to provide lightning surge prot

文件：964.61 Kbytes 页数：5 Pages

Littelfuse

力特

12,500 V - 25,000 V Rectifier Stacks 0.5 A Forward Current 150 ns Recovery Time

High Voltage Rectifier Stacks 0.5A - 2.2A • 70ns - 150ns • Axial Leaded

文件：74.93 Kbytes 页数：2 Pages

VMI

High Voltage Rectifier Stacks

High Voltage Rectifier Stacks 0.5A - 2.2A • 70ns - 150ns • Axial Leaded

文件：71.18 Kbytes 页数：1 Pages

VMI

5,000 V - 12,500 V Rectifier Stacks

[VMI] 5,000 V - 12,500 V Rectifier Stacks 0.5 A Forward Current 3000 ns Recovery Time

文件：71.39 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

High Voltage Rectifier Stacks

High Voltage Rectifier Stacks 0.5A -2.2A • 70ns -150ns • Axial Leaded

文件：100.19 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

High Voltage Rectifier Stacks

High Voltage Rectifier Stacks 0.5A - 2.2A • 70ns - 150ns • Axial Leaded

文件：71.18 Kbytes 页数：1 Pages

VMI

SP1255 Series 160A for V

文件：2.52598 Mbytes 页数：4 Pages

Littelfuse

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降压系列

The SP1253HN is a synchronous buckconverter with output current to 4.8A.It is designed to allow for operating a wide supply voltage range from 9V to 30V. The external shutdown function can be controlled by logic level to pull COMP/EN pin down, and then comes into standby mode. The external compensat • 9V ~ 30V Supply Voltage Range\n• 36V Input Voltage Surge\n• 32V Input Over Voltage Protection\n• 2% Voltage Reference Accuracy\n• 7% Constant Current Accuracy\n• External Current Limit Setting\n• Programmable Operation Frequency\n• Programmable the current limit point of high side MOS\n• S;

Si-Power

硅动力

低电容ESD保护

SP1255P集成了3通道超低电容控向二极管和一个低压TVS二级管，可按IEC61000-4-2标准对USB数据和ID针脚提供最大的防静电保护。 附加的12V TVS二极管可为USB VBUS引脚提供IEC61000-4-5标准规定的高达100A (tP=8/20μs)的雷击电涌保护。 SP1255P可为当前的高强度应用，如快速充电设备，提供出色的保护。\n SP1255P采用紧凑的2.0x1.8mm μDFN封装技术，其典型高度为0.55mm，是智能手机、平板电脑和其他便携式电子产品的理想解决方案。 • ESD，IEC61000-4-2，±30kV（触点），±30kV（空气）\n• EFT，IEC61000-4-4，80A（tP=5/50ns）\n• 雷击，IEC61000-4-5，100A（tP=8/20μs）\n• 保护VBUS工作电压最高为12V\n• 基准设定保护\n• 针对快速充电的高电流处理能力\n• 用于USB数据引脚（D+、D-、ID）\n• ESD，IEC61000-4-2，±12kV（触点），±15kV（空气）\n• EFT，IEC61000-4-4，40A（tP=5/50ns）\n• 雷击，IEC61000-4-5，4A（tP=8/20μs）\n• 0.5pF电容\n;

Littelfuse

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