SP11XX中文资料力特数据手册PDF规格书

描述 Description

Avalanche breakdown diodes fabricated in a proprietary

silicon avalanche technology protect each I/O pin to provide

a high level of protection for electronic equipment that

may experience destructive electrostatic discharges (ESD).

These robust diodes can safely absorb repetitive ESD

strikes at ±30kV (contact and air discharge, IEC 61000-

4-2) without performance degradation. Additionally, each

diode can safely dissipate 80A (SP1105S) of 8/20μs surge

current (IEC 61000-4-5 2nd edition) with very low clamping

voltages.

特性 Features

• ESD, IEC 61000-4-2,

±30kV contact, ±30kV air

• EFT, IEC 61000-4-4, 40A

(5/50ns)

• Lightning, IEC 61000-

4-5 2nd edition, 80A

(tP=8/20μs, SP1105S)

• Low clamping voltage

• Low leakage current

• Moisture Sensitivity

Level(MSL -1)

• Lead free and RoHS

compliant

• AEC-Q101 qualified

Applications

• Switches / Buttons

• Test Equipment /

Instrumentation

• Point-of-Sale Terminals

• Medical Equipment

• Notebooks / Desktops /

Servers

• Computer Peripherals

• Automotive Electronics