丝印：SP005558866；HybridPACK™ DSC S module with SiC MOSFET and NTC

Features • Electrical features - VDSS = 1200 V - IDN = 190 A / IDRM = 380 A - Low inductive design ≤ 8 nH - Low RDS,on - Low switching losses - Low Qg and Crss - New semiconductor material - silicon carbide - Tvj,op = 175°C • Mechanical features - 4.25 kV DC 1 second insulation - Compa

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