V-Band Bias Tuned Gunn Oscillator, 60.0 GHz, ±250 MHz, 13 dBm

FEATURES Low AM/FM Noise and Harmonics Mechanical Tunable Temperature Range: 0 to +50 ˚C APPLICATIONS Test Sources Signal Generation FMCW Radar

文件：350.29 Kbytes 页数：3 Pages

ERAVANT

V-Band Bias Tuned Gunn Oscillator, 60.0 GHz, ±250 MHz, 17 dBm

FEATURES Low AM/FM Noise and Harmonics Mechanical Tunable Temperature Range: 0 to +50 ˚C APPLICATIONS Test Sources Signal Generation FMCW Radar

文件：407.48 Kbytes 页数：3 Pages

ERAVANT

E-Band Bias Tuned Gunn Oscillator, 61 GHz, ±250 MHz, 17 dBm

FEATURES Low AM/FM Noise and Harmonics Mechanical Tunable Temperature Range: 0 to +50 ˚C APPLICATIONS Test Sources Signal Generation FMCW Radar

文件：354.2 Kbytes 页数：3 Pages

ERAVANT

Double Power Solid State Relay

Output : 2x50A/24-600VAC Input : 10-30VDC • 2 Leg Zero Cross Solid State Relay specially designed for resistive loads. • New High Efficiency Back to back thyristors on output with TMS² technology(*) for a long lifetime expectancy: 24 to 600VAC 50A(UL). • Double input with connector CE10

文件：987.51 Kbytes 页数：6 Pages

CELDUC

凡纪继电器

E-Band Bias Tuned Gunn Oscillator, 68.5 GHz, ±250 MHz, 17 dBm

Description: Model SOB-69305217-12-S1 is an E-band, bias tuned Gunn oscillator that utilizes a high performance GaAs Gunn diode and proprietary cavity design to deliver +17 dBm typical power, useful for phase-locking and electrical tuning applications. The oscillator features a bias frequency tun

文件：320.54 Kbytes 页数：3 Pages

ERAVANT

E-Band Bias Tuned Gunn Oscillator, 75.0 GHz

Description: Model SOB-75305218-12-S1 is an E-Band Bias Tuned Gunn Oscillator that utilizes a high performance InP Gunn diode and proprietary cavity design to deliver +18 dBm typical power directly with a frequency tuning range of ±250 MHz. The oscillator delivers low AM/FM noise and harmonic emi

文件：297.75 Kbytes 页数：3 Pages

ERAVANT

E-Band Bias Tuned Gunn Oscillator, 76.5 GHz, ±250 MHz, 13 dBm

Description: Model SOB-77305213-12-S1 is an E-band bias tuned Gunn oscillator that utilizes a high performance GaAs Gunn diode and proprietary cavity design to deliver +13 dBm typical power, useful for phase-locking and electrical tuning applications. The oscillator features a bias frequency tuni

文件：277.72 Kbytes 页数：3 Pages

ERAVANT

E-Band Bias Tuned Gunn Oscillator, 76.5 GHz, ±250 MHz, 17 dBm

Description: Model SOB-77305217-12-S1 is an E-band, bias tuned Gunn oscillator that utilizes a high performance GaAs Gunn diode and proprietary cavity design to deliver +17 dBm typical power, useful for phase-locking and electrical tuning applications. The oscillator features a bias frequency tun

文件：296.2 Kbytes 页数：3 Pages

ERAVANT

W-Band Bias Tuned Gunn Oscillator, 94 GHz, ±500 MHz, 17 dBm

Description: Model SOB-94301317-10-S1 is a W-band, bias tuned Gunn oscillator that utilizes a high performance GaAs Gunn diode and proprietary cavity design to deliver +17 dBm typical power, useful for phase-locking and electrical tuning applications. The oscillator features a bias frequency tuni

文件：333.12 Kbytes 页数：3 Pages

ERAVANT

W-Band Bias Tuned Gunn Oscillator, 94.0 GHz, ±250 MHz, 10 dBm

Description: Model SOB-94305210-10-S1 is a W-Band Bias Tuned Gunn Oscillator that utilizes a high performance GaAs Gunn diode and proprietary cavity design to deliver +10 dBm typical power directly with a frequency tuning range of ±250 MHz. The oscillator delivers low AM/FM noise and harmonic emi

文件：310.84 Kbytes 页数：3 Pages

ERAVANT