首页 >SO2222R>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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Rad-Hard50V,0.8ANPNtransistor Features •Hermeticpackages •ESCCqualified •100krad Description TheSOC2222AHRisabipolartransistorabletooperateundersevereenvironment conditionsandradiationexposureprovidinghighimmunitytototalionizingdose (TID). QualifiedasperESCC5201/002specificationandav | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Rad-Hard50V,0.8ANPNtransistor Features •Hermeticpackages •ESCCqualified •100krad Description TheSOC2222AHRisabipolartransistorabletooperateundersevereenvironment conditionsandradiationexposureprovidinghighimmunitytototalionizingdose (TID). QualifiedasperESCC5201/002specificationandav | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Rad-Hard50V,0.8ANPNtransistor Features •Hermeticpackages •ESCCqualified •100krad Description TheSOC2222AHRisabipolartransistorabletooperateundersevereenvironment conditionsandradiationexposureprovidinghighimmunitytototalionizingdose (TID). QualifiedasperESCC5201/002specificationandav | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
NPNSiliconPlanarEpitaxialTransistor ThisNPNSiliconEpitaxialtransistorisdesignedforuseinlinearandswitchingapplications.ThedeviceishousedintheSOT−223packagewhichisdesignedformediumpowersurfacemountapplications. Features •PNPComplementisPZT2907AT1 •TheSOT−223PackageCanbeSolderedUsingWaveor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
ChipType2C2222AGeometry0400PolarityNPN Chiptype2C2222AbySemicoaSemiconductorsprovidesperformancesimilartothesedevices. ProductSummary: APPLICATIONS:Designedforgeneralpurposeswitchingandamplifierapplications. | Semicoa Semicoa Semiconductor | Semicoa | ||
ChipType2C2222AGeometry0400PolarityNPN Chiptype2C2222AbySemicoaSemiconductorsprovidesperformancesimilartothesedevices. ProductSummary: APPLICATIONS:Designedforgeneralpurposeswitchingandamplifierapplications. | Semicoa Semicoa Semiconductor | Semicoa | ||
SMDSquareAirCoreInductors | ALLIED Allied Components International | ALLIED | ||
NPNMediumPowerTransistor(Switching) Features 1)BVCEO>40V(IC=10mA) 2)ComplementstheUMT2907A/SST2907A/MMST2907A/PN2907A. | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
NPNMediumPowerTransistor(Switching) | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
NPNMediumPowerTransistor(Switching) Features 1)BVCEO>40V(IC=10mA) 2)ComplementstheUMT2907A/SST2907A/MMST2907A/PN2907A. | ROHMRohm 罗姆罗姆半导体集团 | ROHM |
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