SNN10R10LF数据手册行情报价可天士-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
SNN10R10LF	文件：467.95 Kbytes Page：8 Pages	丝印：SNN10R10L；Package：TO-220F-3L；N-Ch Trench MOSFET 文件：467.95 Kbytes 页数：8 Pages	KODENSHI 可天士	KODENSHI
SNN10R10LF	文件：300 bytes Page：1 Pages	Low Voltage Trench MOSFETs	Kodenshi-AUK	Kodenshi-AUK
CEZ10R10A	文件：860.38 Kbytes Page：6 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 64A, RDS (ON) = 9.6 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS (ON) = 15.5 mW @VGS = 6V. 文件：860.38 Kbytes 页数：6 Pages	CET-MOS 华瑞	CET-MOS
CEZ10R10AL	文件：860.13 Kbytes Page：6 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 65A, RDS (ON) = 9.4 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS (ON) = 14 mW @VGS = 4.5V. 文件：860.13 Kbytes 页数：6 Pages	CET-MOS 华瑞	CET-MOS
SNN10R10LD	文件：467.56 Kbytes Page：8 Pages	N-Ch Trench MOSFET 文件：467.56 Kbytes 页数：8 Pages	KODENSHI 可天士	KODENSHI

更多SNN10R10LF供应商更新时间2025-12-1 14:02:00