SNJ54ABT827JT中文资料德州仪器数据手册PDF规格书

State-of-the-Art EPIC-ΙΙB BiCMOS Design

Significantly Reduces Power Dissipation

Flow-Through Architecture Optimizes PCB

Layout

Latch-Up Performance Exceeds 500 mA Per

JEDEC Standard JESD-17

Typical VOLP (Output Ground Bounce) < 1 V

at VCC = 5 V, TA = 25°C

High-Impedance State During Power Up

and Power Down

High-Drive Outputs (−32-mA IOH, 64-mA IOL)

Package Options Include Plastic

Small-Outline (DW), Shrink Small-Outline

DB), and Thin Shrink Small-Outline (PW)

Packages, Ceramic Chip Carriers (FK), and

Plastic (NT) and Ceramic (JT) DIPs

description

These 10-bit buffers or bus drivers provide a

high-performance bus interface for wide data

paths or buses carrying parity.

The 3-state control gate is a 2-input AND gate with

active-low inputs so that, if either output-enable

(OE1 or OE2) input is high, all ten outputs are in

the high-impedance state. The ’ABT827 provides

true data at the outputs.

When VCC is between 0 and 2.1 V, the device

is in the high-impedance state during power up

or power down. However, to ensure

the high-impedance state above 2.1 V, OE should

be tied to VCC through a pullup resistor; the

minimum value of the resistor is determined by

the current-sinking capability of the driver.

The SN54ABT827 is characterized for operation over the full military temperature range of −55°C to 125°C. The

SN74ABT827 is characterized for operation from −40°C to 85°C.