SN74V293-EP

8192 × 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES

ControlledBaseline –OneAssembly/TestSite,OneFabrication Site ExtendedTemperaturePerformanceof –55°Cto125°C EnhancedDiminishingManufacturing Sources(DMS)Support EnhancedProduct-ChangeNotification QualificationPedigree† ChoiceofMemoryOrganizations –SN74V263–8192×1

SN74V293-EP

增强型产品 65536 X 18 同步 Fifo 存储器

The SN74V263, SN74V273, SN74V283, and SN74V293 are exceptionally deep, high-speed, CMOS first-in first-out (FIFO) memories with clocked read and write controls and a flexible bus-matching ×9/×18 data flow.\n\nThere is flexible ×9/×18 bus matching on both read and write ports.\n\n The period required; • Controlled Baseline \n• One Assembly/Test Site, One Fabrication Site\n \n• Extended Temperature Performance of –55°C to 125°C\n• Enhanced Diminishing Manufacturing Sources (DMS) Support\n• Enhanced Product-Change Notification\n• Qualification Pedigree\n• Choice of Memory Organizations \n• SN74V263;

SN74V293-EP

3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES

SN74V293-EP

3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES

SN74VC1G86DBVR

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