8192 × 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES

Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of –55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† Choice of Memory Organizations – SN74V263 – 8192 × 1

文件：766.64 Kbytes 页数：50 Pages

TI

德州仪器

3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES

文件：702.42 Kbytes 页数：49 Pages

TI

德州仪器

3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES

文件：824.3 Kbytes 页数：52 Pages

TI

德州仪器

8192 × 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES

Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of –55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† Choice of Memory Organizations – SN74V263 – 8192 × 1

文件：766.64 Kbytes 页数：50 Pages

TI

德州仪器

3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES

文件：702.42 Kbytes 页数：49 Pages

TI

德州仪器