8192 × 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES

Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of –55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† Choice of Memory Organizations – SN74V263 – 8192 × 1

文件：766.64 Kbytes 页数：50 Pages

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德州仪器

8192 × 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES

Choice of Memory Organizations – SN74V263 – 8192 × 18/16384 × 9 – SN74V273 – 16384 × 18/32768 × 9 – SN74V283 – 32768 × 18/65536 × 9 – SN74V293 – 65536 × 18/131072 × 9 166-MHz Operation 6-ns Read/Write Cycle Time User-Selectable Input and Output Port Bus Sizing – ×9 in to ×9 out – ×9 in t

文件：961.18 Kbytes 页数：54 Pages

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德州仪器

3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES

文件：824.3 Kbytes 页数：52 Pages

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德州仪器

3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES

文件：702.42 Kbytes 页数：49 Pages

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德州仪器

增强型产品 8192 X 18 同步 Fifo 存储器

The SN74V263, SN74V273, SN74V283, and SN74V293 are exceptionally deep, high-speed, CMOS first-in first-out (FIFO) memories with clocked read and write controls and a flexible bus-matching ×9/×18 data flow.\n\nThere is flexible ×9/×18 bus matching on both read and write ports.\n\n The period required • Controlled Baseline \n• Extended Temperature Performance of –55°C to 125°C\n• Enhanced Product-Change Notification\n• Choice of Memory Organizations \n• SN74V273 – 16384 × 18/32768 × 9\n• SN74V293 – 65536 × 18/131072 × 9\n• 133-MHz Operation\n• User-Selectable Input and Output Port Bus Sizing \n• ;

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德州仪器