丝印：SHC10EP；Package：SOIC；TRIPLE 3-INPUT POSITIVE-NAND GATE

Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† Wide Operating Voltage Range of 2 V to 6 V Outputs C

文件：511.35 Kbytes 页数：15 Pages

TI

德州仪器

TRIPLE 3-INPUT POSITIVE-NAND GATE

文件：540.24 Kbytes 页数：11 Pages

TI

德州仪器

TRIPLE 3-INPUT POSITIVE-NAND GATE

Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† Wide Operating Voltage Range of 2 V to 6 V Outputs C

文件：511.35 Kbytes 页数：15 Pages

TI

德州仪器

TRIPLE 3-INPUT POSITIVE-NAND GATE

Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −40°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† Wide Operating Voltage Range of 2 V to 6 V Outputs C

文件：511.35 Kbytes 页数：15 Pages

TI

德州仪器