丝印：SN74HC03N；Package：PDIP(N)；SNx4HC03 Quadruple 2-Input NAND Gates with Open-Drain Outputs

1 Features • Wide Operating Voltage Range: 2 V to 6 V • Outputs Can Drive Up To 10 LSTTL Loads • Low Power Consumption, 20-μA Maximum ICC • Typical tpd = 8 ns at 5 V • ±4-mA Output Drive at 5 V • Low Input Current of 1 μA 2 Applications • NAND OD 3 Description This device contains fo

文件：1.86675 Mbytes 页数：33 Pages

TI

德州仪器

丝印：SN74HC03N；Package：PDIP(N)；SNx4HC03 Quadruple 2-Input NAND Gates with Open-Drain Outputs

1 Features • Wide Operating Voltage Range: 2 V to 6 V • Outputs Can Drive Up To 10 LSTTL Loads • Low Power Consumption, 20-μA Maximum ICC • Typical tpd = 8 ns at 5 V • ±4-mA Output Drive at 5 V • Low Input Current of 1 μA 2 Applications • NAND OD 3 Description This device contains fo

文件：1.86675 Mbytes 页数：33 Pages

TI

德州仪器

丝印：SN74HC03N；Package：PDIP(N)；SNx4HC03 Quadruple 2-Input NAND Gates with Open-Drain Outputs

1 Features • Wide Operating Voltage Range: 2 V to 6 V • Outputs Can Drive Up To 10 LSTTL Loads • Low Power Consumption, 20-μA Maximum ICC • Typical tpd = 8 ns at 5 V • ±4-mA Output Drive at 5 V • Low Input Current of 1 μA 2 Applications • NAND OD 3 Description This device contains fo

文件：1.86675 Mbytes 页数：33 Pages

TI

德州仪器

丝印：SN74HC03N；Package：PDIP(N)；SNx4HC03 Quadruple 2-Input NAND Gates with Open-Drain Outputs

1 Features • Wide Operating Voltage Range: 2 V to 6 V • Outputs Can Drive Up To 10 LSTTL Loads • Low Power Consumption, 20-μA Maximum ICC • Typical tpd = 8 ns at 5 V • ±4-mA Output Drive at 5 V • Low Input Current of 1 μA 2 Applications • NAND OD 3 Description This device contains fo

文件：1.86675 Mbytes 页数：33 Pages

TI

德州仪器

丝印：SN74HC03N；Package：PDIP(N)；SNx4HC03 Quadruple 2-Input NAND Gates with Open-Drain Outputs

1 Features • Wide Operating Voltage Range: 2 V to 6 V • Outputs Can Drive Up To 10 LSTTL Loads • Low Power Consumption, 20-μA Maximum ICC • Typical tpd = 8 ns at 5 V • ±4-mA Output Drive at 5 V • Low Input Current of 1 μA 2 Applications • NAND OD 3 Description This device contains fo

文件：1.86675 Mbytes 页数：33 Pages

TI

德州仪器

丝印：SN74HC03N；Package：PDIP(N)；SNx4HC03 Quadruple 2-Input NAND Gates with Open-Drain Outputs

1 Features • Wide Operating Voltage Range: 2 V to 6 V • Outputs Can Drive Up To 10 LSTTL Loads • Low Power Consumption, 20-μA Maximum ICC • Typical tpd = 8 ns at 5 V • ±4-mA Output Drive at 5 V • Low Input Current of 1 μA 2 Applications • NAND OD 3 Description This device contains fo

文件：1.86675 Mbytes 页数：33 Pages

TI

德州仪器

丝印：HC03；Package：SOP(NS)；SNx4HC03 Quadruple 2-Input NAND Gates with Open-Drain Outputs

1 Features • Wide Operating Voltage Range: 2 V to 6 V • Outputs Can Drive Up To 10 LSTTL Loads • Low Power Consumption, 20-μA Maximum ICC • Typical tpd = 8 ns at 5 V • ±4-mA Output Drive at 5 V • Low Input Current of 1 μA 2 Applications • NAND OD 3 Description This device contains fo

文件：1.86675 Mbytes 页数：33 Pages

TI

德州仪器

丝印：HC03；Package：SOP(NS)；SNx4HC03 Quadruple 2-Input NAND Gates with Open-Drain Outputs

1 Features • Wide Operating Voltage Range: 2 V to 6 V • Outputs Can Drive Up To 10 LSTTL Loads • Low Power Consumption, 20-μA Maximum ICC • Typical tpd = 8 ns at 5 V • ±4-mA Output Drive at 5 V • Low Input Current of 1 μA 2 Applications • NAND OD 3 Description This device contains fo

文件：1.86675 Mbytes 页数：33 Pages

TI

德州仪器

SNx4HC03 Quadruple 2-Input NAND Gates with Open-Drain Outputs

1 Features • Wide Operating Voltage Range: 2 V to 6 V • Outputs Can Drive Up To 10 LSTTL Loads • Low Power Consumption, 20-μA Maximum ICC • Typical tpd = 8 ns at 5 V • ±4-mA Output Drive at 5 V • Low Input Current of 1 μA 2 Applications • NAND OD 3 Description This device contains fo

文件：1.86675 Mbytes 页数：33 Pages

TI

德州仪器

QUADRUPLE 2-INPUT POSITIVE-NAND GATES WITH OPEN-DRAIN OUTPUTS

文件：66.78 Kbytes 页数：4 Pages

TI

德州仪器