TRIPLE 3-INPUT POSITIVE-NAND GATES

文件：68.02 Kbytes 页数：5 Pages

TI

德州仪器

TRIPLE 3-INPUT POSITIVE-NAND GATES

文件：774.13 Kbytes 页数：16 Pages

TI

德州仪器

丝印：SN74F109N；Package：PDIP；DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

Package Options Include Plastic Small-Outline Packages, Ceramic Chip Carriers, and Standard Plastic and Ceramic 300-mil DIPs description These devices contain two independent J-K positive-edge-triggered flip-flops. A low level at the preset (PRE) or clear (CLR) inputs sets or resets the

文件：904.8 Kbytes 页数：15 Pages

TI

德州仪器

丝印：SN74F109N；Package：PDIP；DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

Package Options Include Plastic Small-Outline Packages, Ceramic Chip Carriers, and Standard Plastic and Ceramic 300-mil DIPs description These devices contain two independent J-K positive-edge-triggered flip-flops. A low level at the preset (PRE) or clear (CLR) inputs sets or resets the

文件：904.8 Kbytes 页数：15 Pages

TI

德州仪器

3 通道、3 输入、4.5V 至 5.5V 双极与非门

These devices contain three independent 3-input NAND gates. They perform the Boolean functionsorin positive logic.The SN54F10 is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74F10 is characterized for operation from 0°C to 70°C.   • Package Options Include Plastic Small-Outline Packages, Ceramic Chip Carriers, and Standard Plastic and Ceramic 300-mil DIPs;

TI

德州仪器

16-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY

Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 16-Bit Array Structure Suited for Bus-Oriented Systems description This bus-termination array is designed to reduce reflection noise and minimize ringing on high-performance bus lines. The SN74F1016 feature

文件：516.62 Kbytes 页数：11 Pages

TI

德州仪器

丝印：F1016；Package：SOIC；16-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY

Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 16-Bit Array Structure Suited for Bus-Oriented Systems description This bus-termination array is designed to reduce reflection noise and minimize ringing on high-performance bus lines. The SN74F1016 feature

文件：516.62 Kbytes 页数：11 Pages

TI

德州仪器

丝印：F1016；Package：SOIC；16-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY

Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 16-Bit Array Structure Suited for Bus-Oriented Systems description This bus-termination array is designed to reduce reflection noise and minimize ringing on high-performance bus lines. The SN74F1016 feature

文件：516.62 Kbytes 页数：11 Pages

TI

德州仪器

丝印：F1016；Package：SOIC；16-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY

Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 16-Bit Array Structure Suited for Bus-Oriented Systems description This bus-termination array is designed to reduce reflection noise and minimize ringing on high-performance bus lines. The SN74F1016 feature

文件：516.62 Kbytes 页数：11 Pages

TI

德州仪器

8-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY

Designed to Reduce Reflection Noise Repetitive Peak Forward Current 300 mA 8-Bit Array Structure Suited for Bus-Oriented Systems description This Schottky barrier diode bus-termination array is designed to reduce reflection noise on memory bus lines. This device consists of an 8-bit high

文件：234.78 Kbytes 页数：9 Pages

TI

德州仪器