SN74CBTD3384CDWR.B中文资料德州仪器数据手册PDF规格书

Undershoot Protection for Off-Isolation on

A and B Ports Up To −2 V

Integrated Diode to VCC Provides 5-V Input

Down To 3.3-V Output Level Shift

Bidirectional Data Flow, With Near-Zero

Propagation Delay

Low ON-State Resistance (ron)

Characteristics (ron = 3 Ω Typical)

Low Input/Output Capacitance Minimizes

Loading and Signal Distortion

(Cio(OFF) = 5 pF Typical)

Data and Control Inputs Provide

Undershoot Clamp Diodes

VCC Operating Range From 4.5 V to 5.5 V

Data I/Os Support 0 to 5-V Signaling Levels

(0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)

Control Inputs Can be Driven by TTL or

5-V/3.3-V CMOS Outputs

Ioff Supports Partial-Power-Down Mode

Operation

Latch-Up Performance Exceeds 100 mA Per

JESD 78, Class II

ESD Performance Tested Per JESD 22

− 2000-V Human-Body Model

(A114-B, Class II)

− 1000-V Charged-Device Model (C101)

Supports Both Digital and Analog

Applications: Memory Interleaving, Bus

Isolation, Low-Distortion Signal Gating

description/ordering information

The SN74CBTD3384C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron),

allowing for minimal propagation delay. This device features an integrated diode in series with VCC to provide

level shifting for 5-V input down to 3.3-V output levels. Active Undershoot-Protection Circuitry on the A and B

ports of the SN74CBTD3384C provides protection for undershoot up to −2 V by sensing an undershoot event

and ensuring that the switch remains in the proper OFF state.

The SN74CBTD3384C is organized as two 5-bit bus switches with separate output-enable (1OE, 2OE) inputs.

It can be used as two 5-bit bus switches or as one 10-bit bus switch. When OE is low, the associated 5-bit bus

switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When

OE is high, the associated 5-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that

damaging current will not backflow through the device when it is powered down. The device has isolation during

power off.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup

resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.