DUAL FET BUS SWITCH WITH LEVEL SHIFTING

文件：74.69 Kbytes 页数：5 Pages

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德州仪器

DUAL FET BUS SWITCH WITH LEVEL SHIFTING

文件：755.84 Kbytes 页数：12 Pages

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德州仪器

具有电平转换功能的 5V、1:1 (SPST)、2 通道 FET 总线开关

The SN74CBTD3306 features two independent line switches. Each switch is disabled when the associated output-enable (OE\\) input is high. A diode to VCC is integrated on the chip to allow for level shifting between 5-V inputs and 3.3-V outputs. • 5- Switch Connection Between Two Ports\n• TTL-Compatible Input Levels\n• Designed to Be Used in Level-Shifting Applications;

TI

德州仪器

DUAL FET BUS SWITCH WITH LEVEL SHIFTING 5-V BUS SWITCH WITH —2-V UNDERSHOOT PROTECTION

Undershoot Protection for Off-Isolation on A and B Ports Up To −2 V Integrated Diode to VCC Provides 5-V Input Down To 3.3-V Output Level Shift Bidirectional Data Flow, With Near-Zero Propagation Delay Low ON-State Resistance (ron) Characteristics (ron = 3 Ω Typical) Low Input/Output Capac

文件：754.76 Kbytes 页数：20 Pages

TI

德州仪器

丝印：CC306C；Package：SOIC；DUAL FET BUS SWITCH WITH LEVEL SHIFTING 5-V BUS SWITCH WITH —2-V UNDERSHOOT PROTECTION

Undershoot Protection for Off-Isolation on A and B Ports Up To −2 V Integrated Diode to VCC Provides 5-V Input Down To 3.3-V Output Level Shift Bidirectional Data Flow, With Near-Zero Propagation Delay Low ON-State Resistance (ron) Characteristics (ron = 3 Ω Typical) Low Input/Output Capac

文件：754.76 Kbytes 页数：20 Pages

TI

德州仪器

丝印：CC306C；Package：SOIC；DUAL FET BUS SWITCH WITH LEVEL SHIFTING 5-V BUS SWITCH WITH —2-V UNDERSHOOT PROTECTION

Undershoot Protection for Off-Isolation on A and B Ports Up To −2 V Integrated Diode to VCC Provides 5-V Input Down To 3.3-V Output Level Shift Bidirectional Data Flow, With Near-Zero Propagation Delay Low ON-State Resistance (ron) Characteristics (ron = 3 Ω Typical) Low Input/Output Capac

文件：754.76 Kbytes 页数：20 Pages

TI

德州仪器

丝印：CC306C；Package：SOIC；DUAL FET BUS SWITCH WITH LEVEL SHIFTING 5-V BUS SWITCH WITH —2-V UNDERSHOOT PROTECTION

Undershoot Protection for Off-Isolation on A and B Ports Up To −2 V Integrated Diode to VCC Provides 5-V Input Down To 3.3-V Output Level Shift Bidirectional Data Flow, With Near-Zero Propagation Delay Low ON-State Resistance (ron) Characteristics (ron = 3 Ω Typical) Low Input/Output Capac

文件：754.76 Kbytes 页数：20 Pages

TI

德州仪器

丝印：CC306C；Package：SOIC；DUAL FET BUS SWITCH WITH LEVEL SHIFTING 5-V BUS SWITCH WITH —2-V UNDERSHOOT PROTECTION

Undershoot Protection for Off-Isolation on A and B Ports Up To −2 V Integrated Diode to VCC Provides 5-V Input Down To 3.3-V Output Level Shift Bidirectional Data Flow, With Near-Zero Propagation Delay Low ON-State Resistance (ron) Characteristics (ron = 3 Ω Typical) Low Input/Output Capac

文件：754.76 Kbytes 页数：20 Pages

TI

德州仪器

丝印：CC306C；Package：TSSOP；DUAL FET BUS SWITCH WITH LEVEL SHIFTING 5-V BUS SWITCH WITH —2-V UNDERSHOOT PROTECTION

Undershoot Protection for Off-Isolation on A and B Ports Up To −2 V Integrated Diode to VCC Provides 5-V Input Down To 3.3-V Output Level Shift Bidirectional Data Flow, With Near-Zero Propagation Delay Low ON-State Resistance (ron) Characteristics (ron = 3 Ω Typical) Low Input/Output Capac

文件：754.76 Kbytes 页数：20 Pages

TI

德州仪器

丝印：CC306C；Package：TSSOP；DUAL FET BUS SWITCH WITH LEVEL SHIFTING 5-V BUS SWITCH WITH —2-V UNDERSHOOT PROTECTION

Undershoot Protection for Off-Isolation on A and B Ports Up To −2 V Integrated Diode to VCC Provides 5-V Input Down To 3.3-V Output Level Shift Bidirectional Data Flow, With Near-Zero Propagation Delay Low ON-State Resistance (ron) Characteristics (ron = 3 Ω Typical) Low Input/Output Capac

文件：754.76 Kbytes 页数：20 Pages

TI

德州仪器