SN74CBT3345CDBQR集成电路（IC）的信号开关多路复用器解码器规格书PDF中文资料

SN74CBT3345CDBQR属于集成电路（IC）的信号开关多路复用器解码器。由德州仪器制造生产的SN74CBT3345CDBQR信号开关，多路复用器，解码器逻辑型信号开关、多路复用器和编码器 IC 可用于对以数字格式表示数据的电信号进行路由和选择。这些器件与设计用于模拟信号的类似产品有所不同，它们保留的信息表示为两个电状态之一，而不是两个外部界限内的无穷变化量。

Undershoot Protection for Off-Isolation on

A and B Ports Up To −2 V

Bidirectional Data Flow, With Near-Zero

Propagation Delay

Low ON-State Resistance (ron)

Characteristics (ron = 3 Ω Typical)

Low Input/Output Capacitance Minimizes

Loading and Signal Distortion

(Cio(OFF) = 5.5 pF Typical)

Data and Control Inputs Provide

Undershoot Clamp Diodes

Low Power Consumption

(ICC = 3 μA Max)

VCC Operating Range From 4 V to 5.5 V

Data I/Os Support 0 to 5-V Signaling Levels

(0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)

Control Inputs Can Be Driven by TTL or

5-V/3.3-V CMOS Outputs

Ioff Supports Partial-Power-Down Mode

Operation

Latch-Up Performance Exceeds 100 mA Per

JESD 78, Class II

ESD Performance Tested Per JESD 22

− 2000-V Human-Body Model

(A114-B, Class II)

− 1000-V Charged-Device Model (C101)

Supports Both Digital and Analog

Applications: USB Interface, Memory

Interleaving, Bus Isolation, Low-Distortion

Signal Gating

description/ordering information

The SN74CBT3345C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron),

allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the

SN74CBT3345C provides protection for undershoot up to −2 V by sensing an undershoot event and ensuring

that the switch remains in the proper OFF state.

The SN74CBT3345C is organized as an 8-bit bus switch with two output-enable (OE, OE) inputs. When OE

is high or OE is low, the bus switch is ON, and the A port is connected to the B port, allowing bidirectional data

flow between ports. When OE is low and OE is high, the bus switch is OFF and the high-impedance state exists

between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that

damaging current will not backflow through the device when it is powered down. The device has isolation during

power off.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup

resistor, and OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is

determined by the current-sinking/current-sourcing capability of the driver.