SN74CBT3305CDR.B中文资料德州仪器数据手册PDF规格书

FEATURES

· Undershoot Protection for OFF Isolation on A

and B Ports up to –2 V

· Bidirectional Data Flow With Near-Zero

Propagation Delay

· Low ON-State Resistance (ron) Characteristics

(ron = 3 W Typ)

· Low Input/Output Capacitance Minimizes

Loading and Signal Distortion

(Cio(OFF) = 5 pF Typ)

· Data and Control Inputs Provide Undershoot

Clamp Diodes

· Low Power Consumption

(ICC = 3 mA Max)

· VCC Operating Range From 4 V to 5.5 V

· Data I/Os Support 0- to 5-V Signaling Levels

(0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)

· Control Inputs Can Be Driven by TTL or

5-V/3.3-V CMOS Outputs

· Ioff Supports Partial-Power-Down Mode

Operation

· Latch-Up Performance Exceeds 100 mA Per

JESD 78, ClassII

· ESD Performance Tested Per JESD 22

– 2000-V Human-Body Model

(A114-B, Class II)

– 1000-V Charged-Device Model (C101)

· Supports Both Digital and Analog

Applications: USB Interface, Bus Isolation,

Low-Distortion Signal Gating

DESCRIPTION/ORDERING INFORMATION

The SN74CBT3305C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing

for minimal propagation delay. Active undershoot-protection circuitry on the A and B ports of the device provides

protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the

proper OFF state.

The SN74CBT3305C is organized as two 1-bit bus switches with separate output-enable (1OE, 2OE) inputs. It

can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE is high, the associated 1-bit bus

switch is ON, and the A port is conncected to the B port, allowing bidirectional data flow between ports. When

OE is low, the associated 1-bit bus switch is OFF, and the high-impedance state exists between the A and B

ports.