SN74CB3T3384DWR.B中文资料德州仪器数据手册PDF规格书

Output Voltage Translation Tracks VCC

Supports Mixed-Mode Signal Operation On

All Data I/O Ports

− 5-V Input Down To 3.3-V Output Level

Shift With 3.3-V VCC

− 5-V/3.3-V Input Down To 2.5-V Output

Level Shift With 2.5-V VCC

5-V-Tolerant I/Os With Device Powered-Up

or Powered-Down

Bidirectional Data Flow, With Near-Zero

Propagation Delay

Low ON-State Resistance (ron)

Characteristics (ron = 5 Ω Typical)

Low Input/Output Capacitance Minimizes

Loading (Cio(OFF) = 5 pF Typical)

Data and Control Inputs Provide

Undershoot Clamp Diodes

Low Power Consumption

(ICC = 40 μA Max)

VCC Operating Range From 2.3 V to 3.6 V

Data I/Os Support 0 to 5-V Signaling Levels

(For Example: 0.8-V, 1.2-V, 1.5-V, 1.8-V,

2.5-V, 3.3-V, 5-V)

Control Inputs Can Be Driven by TTL or

5-V/3.3-V/2.5-V CMOS Outputs

Ioff Supports Partial-Power-Down Mode

Operation

Latch-Up Performance Exceeds 250 mA Per

JESD 17

ESD Performance Tested Per JESD 22

− 2000-V Human-Body Model

(A114-B, Class II)

− 1000-V Charged-Device Model (C101)

Supports Digital Applications: Level

Translation, Memory Interleaving, Bus

Isolation

Ideal for Low-Power Portable Equipment