SN74CB3Q16210

20-BIT SWITCH 2.5-V/3.3-V LOW-VOLTAGE FET BUS SWITCH

MemberoftheTexasInstruments WidebusFamily High-BandwidthDataPath UpTo500MHz†) 5-VTolerantI/OswithDevicePoweredUp orPoweredDown LowandFlatON-StateResistance(ron) CharacteristicsOverOperatingRange ron=5ΩTypical) Rail-to-RailSwitchingonDataI/OPorts −0-V

SN74CB3Q16210

具有 2 个控制输入的 3.3V、1:1 (SPST)、20 通道 FET 总线开关; • Member of the Texas Instruments Widebus™ Family\n• High-Bandwidth Data Path (Up To 500 MHz)\n• 5-V Tolerant I/Os with Device Powered Up or Powered Down\n• Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 5 Typical)\n• Rail-to-Rail Switching on Data I/O Ports \n• 0-V to 5-V Switching With 3.3-V VCC\n• 0-V to 3.3-V Switching With 2.5-V VCC\n \n• Bidirectional Data Flow, With Near-Zero Propagation Delay\n• Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 4 pF Typical)\n• Fast Switching Frequency (fOE\\ = 20 MHz Max)\n• Data and Control Inputs Provide Undershoot Clamp Diodes\n• Low Power Consumption (ICC = 1 mA Typical)\n• VCC Operating Range From 2.3 V to 3.6 V\n• Data I/Os Support 0 V to 5 V Signaling Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)\n• Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs\n• Ioff Supports Partial-Power-Down Mode Operation\n• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II\n• ESD Performance Tested Per JESD 22 \n• 2000-V Human-Body Model (A114-B, Class II)\n• 1000-V Charged-Device Model (C101)\n \n• Supports Both Digital and Analog Applications: PCI Interface, Differential Signal Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating\n For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, literature number SCDA008. Widebus is a trademark of Texas Instruments.;

The SN74CB3Q16210 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q16210 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems. The SN74CB3Q16210 is organized as two 10-bit bus switches with separate output-enable (1OE\\, 2OE\\) inputs. It can be used as two 10-bit bus switches or as one 20-bit bus switch. When OE\\ is low, the associated 10-bit bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\\ is high, the associated 10-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off. To ensure the high-impedance state during power up or power down, OE\\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

SN74CB3Q16210

20 BIT SWITCH 2.5-V/3.3-V LOW-VOLTAGE FET BUS SWITCH

SN74CB3Q16210

20-BIT SWITCH 2.5-V/3.3-V LOW-VOLTAGE FET BUS SWITCH

SN74CB3Q16210DGGR

丝印：CB3Q16210；Package：TSSOP；20-BIT SWITCH 2.5.V/3.3-V LOW-VOLTAGE FET BUS SWITCH

*MemberoftheTexasInstruments WidebusFamily *High-BandwidthDataPath (UpTo500MHz†) *5-VTolerantI/OswithDevicePoweredUp orPoweredDown *LowandFlatON-StateResistance(ron) CharacteristicsOverOperatingRange (ron=5ΩTypical) *Rail-to-RailSwitchingonDataI/OP

SN74CB3Q16210DGGR

丝印：CB3Q16210；Package：TSSOP；20-BIT SWITCH 2.5-V/3.3-V LOW-VOLTAGE FET BUS SWITCH

MemberoftheTexasInstruments WidebusFamily High-BandwidthDataPath UpTo500MHz†) 5-VTolerantI/OswithDevicePoweredUp orPoweredDown LowandFlatON-StateResistance(ron) CharacteristicsOverOperatingRange ron=5ΩTypical) Rail-to-RailSwitchingonDataI/OPorts −0-V

SN74CB3Q16210DGGR.B

丝印：CB3Q16210；Package：TSSOP；20-BIT SWITCH 2.5-V/3.3-V LOW-VOLTAGE FET BUS SWITCH

MemberoftheTexasInstruments WidebusFamily High-BandwidthDataPath UpTo500MHz†) 5-VTolerantI/OswithDevicePoweredUp orPoweredDown LowandFlatON-StateResistance(ron) CharacteristicsOverOperatingRange ron=5ΩTypical) Rail-to-RailSwitchingonDataI/OPorts −0-V

SN74CB3Q16210DGVR

丝印：BW210；Package：TVSOP；20-BIT SWITCH 2.5.V/3.3-V LOW-VOLTAGE FET BUS SWITCH

*MemberoftheTexasInstruments WidebusFamily *High-BandwidthDataPath (UpTo500MHz†) *5-VTolerantI/OswithDevicePoweredUp orPoweredDown *LowandFlatON-StateResistance(ron) CharacteristicsOverOperatingRange (ron=5ΩTypical) *Rail-to-RailSwitchingonDataI/OP

SN74CB3Q16210DGVR

丝印：BW210；Package：TVSOP；20-BIT SWITCH 2.5.V/3.3-V LOW-VOLTAGE FET BUS SWITCH

*MemberoftheTexasInstruments WidebusFamily *High-BandwidthDataPath (UpTo500MHz†) *5-VTolerantI/OswithDevicePoweredUp orPoweredDown *LowandFlatON-StateResistance(ron) CharacteristicsOverOperatingRange (ron=5ΩTypical) *Rail-to-RailSwitchingonDataI/OP

SN74CB3Q16210DGVR

丝印：BW210；Package：TVSOP；20-BIT SWITCH 2.5-V/3.3-V LOW-VOLTAGE FET BUS SWITCH

MemberoftheTexasInstruments WidebusFamily High-BandwidthDataPath UpTo500MHz†) 5-VTolerantI/OswithDevicePoweredUp orPoweredDown LowandFlatON-StateResistance(ron) CharacteristicsOverOperatingRange ron=5ΩTypical) Rail-to-RailSwitchingonDataI/OPorts −0-V