SN74BCT373DBR集成电路（IC）的锁存器规格书PDF中文资料

SN74BCT373DBR属于集成电路（IC）的锁存器。由美国德州仪器公司制造生产的SN74BCT373DBR锁存器锁存器是类似于触发器的基本数字存储设备，但是不同之处在于，在锁存使能（或类似命名）信号处于有效逻辑状态的任何时间，保持的逻辑状态都可以改变。“透明”锁存器还允许设备输出在锁存使能信号有效时反映输入的当前状态，而相反的是，状态仅在保持状态已固定时改变。

Operating Voltage Range of 4.5 V to 5.5 V

State-of-the-Art BiCMOS Design

Significantly Reduces ICCZ

Full Parallel Access for Loading

3-State Outputs Drive Bus Lines or Buffer

Memory Address Registers

ESD Protection Exceeds JESD 22

– 2000-V Human-Body Model (A114-A)

description/ordering information

These 8-bit latches feature 3-state outputs designed specifically for driving highly capacitive or relatively

low-impedance loads. They are particularly suitable for implementing buffer registers, I/O ports, bidirectional

bus drivers, and working registers.

The eight latches of the ’BCT373 devices are transparent D-type latches. While the latch-enable (LE) input is

high, the Q outputs follow the data (D) inputs. When the latch enable is taken low, the Q outputs are latched

at the logic levels that were set up at the D inputs.

A buffered output-enable (OE) input can be used to place the eight outputs in either a normal logic state (high

or low logic levels) or the high-impedance state. In the high-impedance state, the outputs neither load nor drive

the bus lines significantly. The high-impedance state and increased drive provide the capability to drive bus

lines without interface or pullup components.