SN74AUP1T08 Low Power, 1.8, 2.5, 3.3-V Input, 3.3-V CMOS Output, Single 2-Input Positive-AND Gate

1 Features • ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Single-Supply Voltage Translator • Output Level Up to Supply VCC CMOS Level – 1.8 V to 3.3 V (at VCC = 3.3 V) – 2.5 V to 3.3 V (at VCC = 3.3 V) – 1.8 V to 2.

文件：779.93 Kbytes 页数：18 Pages

TI

德州仪器

SN74AUP1T08 Low Power, 1.8, 2.5, 3.3-V Input, 3.3-V CMOS Output, Single 2-Input Positive-AND Gate

1 Features • ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Single-Supply Voltage Translator • Output Level Up to Supply VCC CMOS Level – 1.8 V to 3.3 V (at VCC = 3.3 V) – 2.5 V to 3.3 V (at VCC = 3.3 V) – 1.8 V to 2.

文件：786.5 Kbytes 页数：18 Pages

TI

德州仪器

LOW POWER, 1.8/2.5/3.3-V INPUT, 3.3-V CMOS OUTPUT, SINGLE 2-INPUT POSITIVE-AND GATE

文件：167.83 Kbytes 页数：11 Pages

TI

德州仪器

低功耗、1.8/2.5/3.3V 输入、3.3V CMOS 输出、2 输入正与门

SN74AUP1T08 执行布尔函数 Y = A • B or Y = /A + /B，专门用于逻辑电平转换应用，在此类应用中输出以电源 VCC 为基准。\n\n AUP 技术是行业最低功耗逻辑技术，此技术设计用于扩展运行中的电池寿命。所有接受 1.8V LVCMOS 信号的输入电平，同时由一个单 3.3V 或 2.5V VCC电源供电运行。该产品还可以保持出色的信号完整性（请见Figure 5-1和Figure 5-2）。\n\n 2.3V 至 3.6V 的宽 VCC范围有可能实现开关输出电平连接至外部控制器或处理器。\n\n 施密特触发器输入（正负输入转换之间的 ΔVT=210mV）改进了 • 静电放电 (ESD) 性能测试符合 JESD 22 标准 \n• 1000V 充电器件模型 (C101)\n• 单电源电压转换器\n• 1.8V 至 3.3V（VCC=3.3V 时）\n• 1.8V 至 2.5V（VCC=2.5V 时）\n• 施密特触发器输入可抑制输入噪声并提供更佳的输出信号完整性\n• 超低静态功耗： 0.1µA\n• 闩锁性能超过 100mA，符合 JESD 78 II 类规范的要求\n• 有关更多逻辑门选项，请访问 www.ti.com/littlelogic;

TI

德州仪器

SN74AUP1T08 Low Power, 1.8, 2.5, 3.3-V Input, 3.3-V CMOS Output, Single 2-Input Positive-AND Gate

1 Features • ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Single-Supply Voltage Translator • Output Level Up to Supply VCC CMOS Level – 1.8 V to 3.3 V (at VCC = 3.3 V) – 2.5 V to 3.3 V (at VCC = 3.3 V) – 1.8 V to 2.

文件：786.5 Kbytes 页数：18 Pages

TI

德州仪器

丝印：6EF；Package：SC70；SN74AUP1T08 Low Power, 1.8, 2.5, 3.3-V Input, 3.3-V CMOS Output, Single 2-Input Positive-AND Gate

1 Features • ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Single-Supply Voltage Translator • Output Level Up to Supply VCC CMOS Level – 1.8 V to 3.3 V (at VCC = 3.3 V) – 2.5 V to 3.3 V (at VCC = 3.3 V) – 1.8 V to 2.

文件：779.93 Kbytes 页数：18 Pages

TI

德州仪器

SN74AUP1T08 Low Power, 1.8, 2.5, 3.3-V Input, 3.3-V CMOS Output, Single 2-Input Positive-AND Gate

1 Features • ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Single-Supply Voltage Translator • Output Level Up to Supply VCC CMOS Level – 1.8 V to 3.3 V (at VCC = 3.3 V) – 2.5 V to 3.3 V (at VCC = 3.3 V) – 1.8 V to 2.

文件：786.5 Kbytes 页数：18 Pages

TI

德州仪器

SN74AUP1T08 Low Power, 1.8, 2.5, 3.3-V Input, 3.3-V CMOS Output, Single 2-Input Positive-AND Gate

1 Features • ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Single-Supply Voltage Translator • Output Level Up to Supply VCC CMOS Level – 1.8 V to 3.3 V (at VCC = 3.3 V) – 2.5 V to 3.3 V (at VCC = 3.3 V) – 1.8 V to 2.

文件：786.5 Kbytes 页数：18 Pages

TI

德州仪器

丝印：6EF；Package：SC70；SN74AUP1T08 Low Power, 1.8, 2.5, 3.3-V Input, 3.3-V CMOS Output, Single 2-Input Positive-AND Gate

1 Features • ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Single-Supply Voltage Translator • Output Level Up to Supply VCC CMOS Level – 1.8 V to 3.3 V (at VCC = 3.3 V) – 2.5 V to 3.3 V (at VCC = 3.3 V) – 1.8 V to 2.

文件：779.93 Kbytes 页数：18 Pages

TI

德州仪器

SN74AUP1T08 Low Power, 1.8, 2.5, 3.3-V Input, 3.3-V CMOS Output, Single 2-Input Positive-AND Gate

1 Features • ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Single-Supply Voltage Translator • Output Level Up to Supply VCC CMOS Level – 1.8 V to 3.3 V (at VCC = 3.3 V) – 2.5 V to 3.3 V (at VCC = 3.3 V) – 1.8 V to 2.

文件：786.5 Kbytes 页数：18 Pages

TI

德州仪器