SN74AUP1G08QDCKRQ1集成电路（IC）的门反相器规格书PDF中文资料

SN74AUP1G08QDCKRQ1属于集成电路（IC）的门反相器。由美国德州仪器公司制造生产的SN74AUP1G08QDCKRQ1门和反相器逻辑栅极和逆变器系列中的产品对单个逻辑信号执行基本逻辑运算（例如 AND、NOT、OR 等）。与触发器不同，它们不能够存储信息，不会对提供给其输入的信号立即做出响应。虽然早就被集成电路实施形式所取代，以用于实现复杂功能，但分立栅极仍可在仅需要非常简单逻辑功能的情况下使用。

1FEATURES

2• AEC-Q100 Qualified with the Following

Results:

– Device Temperature Grade 1: –40°C to

125°C Ambient Operating Temperature

Range

– Device HBM ESD Classification Level H2

– Device CDM ESD Classification Level C3B

• Available in the Texas Instruments NanoStar™

Package

• Low Static-Power Consumption:

ICC = 0.9 μA Max

• Low Dynamic-Power Consumption:

Cpd = 4.3 pF Typ at 3.3 V

• Low Input Capacitance: Ci = 1.5 pF Typ

• Low Noise: Overshoot and Undershoot

< 10% of VCC

• Ioff Supports Partial-Power-Down Mode

Operation

• Schmitt-Trigger Action Allows Slow Input

Transition and Better Switching Noise

Immunity at the Input (Vhys = 250 mV, Typ at

3.3 V)

• Wide Operating VCC Range of 0.8 V to 3.6 V

• Optimized for 3.3-V Operation

• 3.6-V Input/Output (I/O) Tolerant to Support

Mixed-Mode Signal Operation

• tpd = 4.3 ns Max at 3.3 V

• Suitable for Point-to-Point Applications

• Latch-Up Performance Exceeds 100 mA Per

JESD-78, Class II

DESCRIPTION

The AUP family is TI's premier solution to the low-power needs of the industry in battery-powered portable

applications. This family ensures a very low static- and dynamic-power consumption across the entire VCC range

of 0.8 V to 3.6 V, resulting in increased battery life (see Figure 1). This product also maintains excellent signal

integrity (see the very low undershoot and overshoot characteristics shown in Figure 2).

Y  A • B or Y  A
B

This single 2-input positive-AND gate performs the Boolean function: in positive logic.

NanoStar package technology is a major breakthrough in integrated circuit (IC) packaging concepts, because it

uses the die as the package.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs,

preventing damaging current backflow through the device when it is powered down.