SINGLE 2-INPUT NOR GATE

Features « Wide supply voltage range from 0.8V to 3.6V « Inputs accept voltages up to 3.6V o lorr Supports partial-power-down mode « Low static power consumption; lcc=0.5pA (Max.) » ESD Protection Exceeds JESD 22 -2000-V Human-Body Model (A114-A) -200-V Machine Model (A115-A) -1000-V Charg

文件：5.50065 Mbytes 页数：10 Pages

TECHPUBLIC

台舟电子

LOW-POWER SINGLE 2-INPUT POSITIVE-NOR GATE

文件：337.7 Kbytes 页数：13 Pages

TI

德州仪器

LOW-POWER SINGLE 2-INPUT POSITIVE-NOR GATE

文件：903 Kbytes 页数：21 Pages

TI

德州仪器

LOW-POWER SINGLE 2-INPUT POSITIVE-NOR GATE

文件：492.28 Kbytes 页数：16 Pages

TI

德州仪器

Low-Power Single 2-Input Positive-NOR Gate

文件：1.6735 Mbytes 页数：34 Pages

TI

德州仪器

单路 2 输入、0.8V 至 3.6V 低功耗或非门

This single 2-input positive-NOR gate performs the Boolean function Y = A + B or Y = A × B in positive logic. • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch\n• Low Static-Power Consumption (ICC = 0.9 µA Max)\n• Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V)\n• Low Input Capacitance (Ci = 1.5 pF Typ)\n• Low Noise – Overshoot and Undershoot CC\n• Ioff Supports Live Insertio;

TI

德州仪器

丝印：H02R；Package：SOT-23(DBV)；SN74AUP1G02 Low-Power Single 2-Input Positive-NOR Gate

1 Features 1• Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot

文件：2.44413 Mbytes 页数：47 Pages

TI

德州仪器

丝印：H02R；Package：SOT-23(DBV)；SN74AUP1G02 Low-Power Single 2-Input Positive-NOR Gate

1 Features 1• Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot

文件：2.44413 Mbytes 页数：47 Pages

TI

德州仪器

丝印：H02R；Package：SOT-23(DBV)；SN74AUP1G02 Low-Power Single 2-Input Positive-NOR Gate

1 Features 1• Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot

文件：2.44413 Mbytes 页数：47 Pages

TI

德州仪器

丝印：H02R；Package：SOT-23(DBV)；SN74AUP1G02 Low-Power Single 2-Input Positive-NOR Gate

1 Features 1• Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot

文件：2.44413 Mbytes 页数：47 Pages

TI

德州仪器