丝印：H00R；Package：SOT-23(DBV)；SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate

1 Features 1• ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cp

文件：2.44241 Mbytes 页数：50 Pages

TI

德州仪器

SINGLE 2-INPUT NAND GATE

Features « Wide supply voltage range from 0.8V to 3.6V « Inputs accept voltages up to 3.6V o lorr Supports partial-power-down mode « Low static power consumption; lcc=0.5pA (Max.) » ESD Protection Exceeds JESD 22 -2000-V Human-Body Model (A114-A) -200-V Machine Model (A115-A) -1000-V Charg

文件：5.50581 Mbytes 页数：10 Pages

TECHPUBLIC

台舟电子

LOW-POWER SINGLE 2-INPUT POSITIVE-NAND GATE

文件：314.45 Kbytes 页数：14 Pages

TI

德州仪器

LOW-POWER SINGLE 2-INPUT POSITIVE-NAND GATE

文件：551.68 Kbytes 页数：17 Pages

TI

德州仪器