QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3.1 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101

文件：593.15 Kbytes 页数：18 Pages

TI

德州仪器

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

文件：108.98 Kbytes 页数：8 Pages

TI

德州仪器

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

文件：656.81 Kbytes 页数：15 Pages

TI

德州仪器

具有三态输出的 4 通道、1.65V 至 3.6V 缓冲器

This quadruple bus buffer gate is designed for 1.65-V to 3.6-V VCC operation.\n\n The SN74ALVC126 features independent line drivers with 3-state outputs. Each output is disabled when the associated output-enable (OE) input is low.\n\n To ensure the high-impedance state during power up or power down, • Operates From 1.65 V to 3.6 V\n• Max tpd of 3.1 ns at 3.3 V\n• ±24-mA Output Drive at 3.3 V\n• Latch-Up Performance Exceeds 250 mA Per JESD 17\n• ESD Protection Exceeds JESD 22 \n• 2000-V Human-Body Model (A114-A)\n• 200-V Machine Model (A115-A)\n• 1000-V Charged-Device Model (C101);

TI

德州仪器

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3.1 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101

文件：593.56 Kbytes 页数：18 Pages

TI

德州仪器

丝印：ALVC126；Package：SOIC；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3.1 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101

文件：593.15 Kbytes 页数：18 Pages

TI

德州仪器

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3.1 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101

文件：593.56 Kbytes 页数：18 Pages

TI

德州仪器

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3.1 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101

文件：593.56 Kbytes 页数：18 Pages

TI

德州仪器

丝印：ALVC126；Package：SOIC；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3.1 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101

文件：593.15 Kbytes 页数：18 Pages

TI

德州仪器

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3.1 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101

文件：593.56 Kbytes 页数：18 Pages

TI

德州仪器