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SN74ALVC125DR

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101)

文件:595.95 Kbytes 页数:18 Pages

TI

德州仪器

SN74ALVC125DR

丝印:ALVC125;Package:SOIC;QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101)

文件:595.21 Kbytes 页数:18 Pages

TI

德州仪器

SN74ALVC125DR

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

文件:254 Kbytes 页数:11 Pages

TI

德州仪器

SN74ALVC125DR

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

文件:659.64 Kbytes 页数:15 Pages

TI

德州仪器

SN74ALVC125DR.B

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101)

文件:595.95 Kbytes 页数:18 Pages

TI

德州仪器

SN74ALVC125DR.B

丝印:ALVC125;Package:SOIC;QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101)

文件:595.21 Kbytes 页数:18 Pages

TI

德州仪器

SN74ALVC125DR1G4

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101)

文件:595.95 Kbytes 页数:18 Pages

TI

德州仪器

SN74ALVC125DR1G4.B

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101)

文件:595.95 Kbytes 页数:18 Pages

TI

德州仪器

SN74ALVC125DR1G4.B

丝印:ALVC125;Package:SOIC;QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101)

文件:595.21 Kbytes 页数:18 Pages

TI

德州仪器

SN74ALVC125DRE4

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

文件:659.64 Kbytes 页数:15 Pages

TI

德州仪器

产品属性

  • 产品编号:

    SN74ALVC125DR

  • 制造商:

    Texas Instruments

  • 类别:

    集成电路(IC) > 缓冲器,驱动器,接收器,收发器

  • 系列:

    74ALVC

  • 包装:

    管件

  • 逻辑类型:

    缓冲器,非反向

  • 每个元件位数:

    1

  • 输出类型:

    三态

  • 电流 - 输出高、低:

    24mA,24mA

  • 电压 - 供电:

    1.65V ~ 3.6V

  • 工作温度:

    -40°C ~ 85°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    14-SOIC(0.154",3.90mm 宽)

  • 供应商器件封装:

    14-SOIC

  • 描述:

    IC BUF NON-INVERT 3.6V 14SOIC

供应商型号品牌批号封装库存备注价格
TI
24+
SOIC
6000
进口原装正品假一赔十,货期7-10天
询价
TI
25+
SOIC14
131
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
TI
24+
5000
自己现货
询价
TEXASINSTRU
24+
原装进口原厂原包接受订货
732
原装现货假一罚十
询价
TI
23+
24/SMD模块
5000
原装正品,假一罚十
询价
TI
25+
SOP14
2987
只售原装自家现货!诚信经营!欢迎来电!
询价
TI
25+
SOP
90000
一级代理商进口原装现货、假一罚十价格合理
询价
TI
19+
TSSOP
16200
原装正品,现货特价
询价
TI
24+
SMD
10000
全新原厂原装,进口正品现货,正规渠道可含税!!
询价
TI
20+
SOP14
53650
TI原装主营-可开原型号增税票
询价
更多SN74ALVC125DR供应商 更新时间2026-2-2 14:26:00