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SN74ALVC10

TRIPLE 3-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

文件:591.53 Kbytes 页数:18 Pages

TI

德州仪器

SN74ALVC10

TRIPLE 3-INPUT POSITIVE-NAND GATE

文件:110.5 Kbytes 页数:7 Pages

TI

德州仪器

SN74ALVC10

TRIPLE 3-INPUT POSITIVE-NAND GATE

文件:654.91 Kbytes 页数:15 Pages

TI

德州仪器

SN74ALVC10

3 通道、3 输入、1.65V 至 3.6V 与非门

This triple 3-input positive-NAND gate is designed for 1.65-V to 3.6-V VCC operation.\n\n The SN74ALVC10 performs the Boolean function Y = (A • B • C)\\ or Y = A\\ + B\\ + C\\ in positive logic. • Operates From 1.65 V to 3.6 V \n• Max tpd of 3 ns at 3.3 V \n• ±24-mA Output Drive at 3.3 V \n• Latch-Up Performance Exceeds 250 mA Per JESD 17\n• ESD Protection Exceeds JESD 22 \n• 2000-V Human-Body Model (A114-A)\n• 200-V Machine Model (A115-A)\n• 1000-V Charged-Device Model (C101);

TI

德州仪器

SN74ALVC10D

丝印:ALVC10;Package:SOIC;TRIPLE 3-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

文件:591.53 Kbytes 页数:18 Pages

TI

德州仪器

SN74ALVC10D.B

丝印:ALVC10;Package:SOIC;TRIPLE 3-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

文件:591.53 Kbytes 页数:18 Pages

TI

德州仪器

SN74ALVC10DGVR

丝印:VA10;Package:TVSOP;TRIPLE 3-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

文件:591.53 Kbytes 页数:18 Pages

TI

德州仪器

SN74ALVC10DGVR.B

丝印:VA10;Package:TVSOP;TRIPLE 3-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

文件:591.53 Kbytes 页数:18 Pages

TI

德州仪器

SN74ALVC10DR

丝印:ALVC10;Package:SOIC;TRIPLE 3-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

文件:591.53 Kbytes 页数:18 Pages

TI

德州仪器

SN74ALVC10DR.B

丝印:ALVC10;Package:SOIC;TRIPLE 3-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

文件:591.53 Kbytes 页数:18 Pages

TI

德州仪器

技术参数

  • Supply voltage (Min) (V):

    1.65

  • Supply voltage (Max) (V):

    3.6

  • Number of channels (#):

    3

  • Inputs per channel:

    3

  • IOL (Max) (mA):

    24

  • IOH (Max) (mA):

    -24

  • Input type:

    Standard CMOS

  • Output type:

    Push-Pull

  • Features:

    Ultra high speed (tpd

  • Data rate (Max) (Mbps):

    150

  • Rating:

    Catalog

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更多SN74ALVC10供应商 更新时间2026-1-30 14:08:00