丝印：ALVC10；Package：SOP；TRIPLE 3-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

文件：591.53 Kbytes 页数：18 Pages

TI

德州仪器

丝印：VA10；Package：TSSOP；TRIPLE 3-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

文件：591.53 Kbytes 页数：18 Pages

TI

德州仪器

丝印：VA10；Package：TSSOP；TRIPLE 3-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

文件：591.53 Kbytes 页数：18 Pages

TI

德州仪器

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101)

文件：595.21 Kbytes 页数：18 Pages

TI

德州仪器

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101)

文件：595.95 Kbytes 页数：18 Pages

TI

德州仪器

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101)

文件：595.95 Kbytes 页数：18 Pages

TI

德州仪器

丝印：ALVC125；Package：SOIC；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101)

文件：595.21 Kbytes 页数：18 Pages

TI

德州仪器

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101)

文件：595.95 Kbytes 页数：18 Pages

TI

德州仪器

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101)

文件：595.95 Kbytes 页数：18 Pages

TI

德州仪器

丝印：ALVC125；Package：SOIC；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101)

文件：595.21 Kbytes 页数：18 Pages

TI

德州仪器