SN74AHCT1G14-Q1 Automotive Single Schmitt-Trigger Inverter Gate

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: -40°C to +125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Operating range of 4.5 V to 5.5 V • Low power consumption, 10-μA maximum ICC • ±8-mA output drive at

文件：923.28 Kbytes 页数：22 Pages

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德州仪器

SN74AHCT1G14-Q1 Automotive Single Schmitt-Trigger Inverter Gate

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: -40°C to +125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Operating range of 4.5 V to 5.5 V • Low power consumption, 10-μA maximum ICC • ±8-mA output drive at

文件：1.11006 Mbytes 页数：25 Pages

TI

德州仪器

SN74AHCT1G14-Q1 Automotive Single Schmitt-Trigger Inverter Gate

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: -40°C to +125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Operating range of 4.5 V to 5.5 V • Low power consumption, 10-μA maximum ICC • ±8-mA output drive at

文件：1.07781 Mbytes 页数：25 Pages

TI

德州仪器

SN74AHCT1G14 Single Schmitt-Trigger Inverter Gate

1 Features • Operating range 4.5V to 5.5V • Max tpd of 8ns at 5V • Low power consumption, 1μA max ICC • ±8mA output drive at 5V • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 2 Applications • Enable or disable a digital signal • Controlling an ind

文件：1.04797 Mbytes 页数：25 Pages

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德州仪器

具有施密特触发输入的汽车级单路 4.5V 至 5.5V 反相器

SN74AHCT1G14-Q1 是一个单路反相器门。该器件执行布尔函数 Y = A。\n\n该器件以独立反相器门的形式工作，但出于施密特操作方面的原因，对于正向 (V T+) 和负向 (V T–) 信号，逻辑门可能具有不同的输入阈值。 • AEC-Q100 qualified for automotive applications: \n• Device HBM ESD classification level 2 \n• Operating range of 4.5 V to 5.5 V\n• ±8-mA output drive at 5 V\n• Latch-up performance exceeds 250 mA per JESD 17;

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德州仪器

SN74AHCT1G14-Q1 Automotive Single Schmitt-Trigger Inverter Gate

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: -40°C to +125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Operating range of 4.5 V to 5.5 V • Low power consumption, 10-μA maximum ICC • ±8-mA output drive at

文件：1.11006 Mbytes 页数：25 Pages

TI

德州仪器