SN74AHCT1G00-Q1 Automotive 2-Input Positive-NAND Gates

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: -40°C to +125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Operating range of 4.5 V to 5.5 V • Low power consumption, 10-μA maximum ICC • ±8-mA output drive at

文件：959.33 Kbytes 页数：22 Pages

TI

德州仪器

SN74AHCT1G00-Q1 Automotive 2-Input Positive-NAND Gates

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: -40°C to +125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Operating range of 4.5V to 5.5V • Low power consumption, 10μA maximum ICC • ±8mA output drive at 5V

文件：1.14614 Mbytes 页数：25 Pages

TI

德州仪器

SN74AHCT1G00 Single 2-Input Positive-NAND Gate

1 Features • Operating Range of 4.5 V to 5.5 V • Maximum tpd of 7.1 ns at 5 V • Low Power Consumption, 10-μA Maximum ICC • ±8-mA Output Drive at 5 V • Inputs Are TTL-Voltage Compatible • Latch-up Performance Exceeds 250 mA Per JESD 17 2 Applications • IP Phones • Notebook PCs • Printe

文件：1.05973 Mbytes 页数：23 Pages

TI

德州仪器

Automotive, two-input 4.5-V to 5.5-V single NAND gate with TTL-compatible CMOS inputs

SN74AHCT1G00-Q1 是一个 2 输入与非门。每个逻辑门以正逻辑执行布尔函数 Y = A × B。 • 符合面向汽车应用的 AEC-Q100 标准： \n• 器件 HBM ESD 分类等级 2 \n• 工作电压范围为 4.5 V 至 5.5V\n• 5 V 下的输出驱动为 ±8mA\n• 闩锁性能超过 250mA， 符合 JESD 17 规范;

TI

德州仪器

SN74AHCT1G00-Q1 Automotive 2-Input Positive-NAND Gates

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: -40°C to +125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Operating range of 4.5V to 5.5V • Low power consumption, 10μA maximum ICC • ±8mA output drive at 5V

文件：1.14614 Mbytes 页数：25 Pages

TI

德州仪器