丝印：HB14；Package：SSOP；SNx4AHCT14 Hex Schmitt-Trigger Inverters

1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 • ESD protection exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • On products compliant to MIL-PRF-38535, all parameters

文件：3.33053 Mbytes 页数：38 Pages

TI

德州仪器

丝印：HB14；Package：TVSOP；SNx4AHCT14 Hex Schmitt-Trigger Inverters

1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 • ESD protection exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • On products compliant to MIL-PRF-38535, all parameters

文件：3.33053 Mbytes 页数：38 Pages

TI

德州仪器

丝印：HB14；Package：TVSOP；SNx4AHCT14 Hex Schmitt-Trigger Inverters

1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 • ESD protection exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • On products compliant to MIL-PRF-38535, all parameters

文件：3.33053 Mbytes 页数：38 Pages

TI

德州仪器

丝印：AHCT14；Package：SOIC；SNx4AHCT14 Hex Schmitt-Trigger Inverters

1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 • ESD protection exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • On products compliant to MIL-PRF-38535, all parameters

文件：3.33053 Mbytes 页数：38 Pages

TI

德州仪器

丝印：AHCT14；Package：SOIC；SNx4AHCT14 Hex Schmitt-Trigger Inverters

1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 • ESD protection exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • On products compliant to MIL-PRF-38535, all parameters

文件：3.33053 Mbytes 页数：38 Pages

TI

德州仪器

SNx4AHCT14 Hex Schmitt-Trigger Inverters

1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 • ESD protection exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • On products compliant to MIL-PRF-38535, all parameters

文件：3.33053 Mbytes 页数：38 Pages

TI

德州仪器

HEX SCHMITT-TRIGGER INVERTER

Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of –55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† EPIC (Enhanced-Performance Implanted CMOS) Process

文件：703.87 Kbytes 页数：9 Pages

TI

德州仪器

丝印：AHCT14MEP；Package：SOIC；HEX SCHMITT-TRIGGER INVERTER

Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of –55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† EPIC (Enhanced-Performance Implanted CMOS) Process

文件：703.87 Kbytes 页数：9 Pages

TI

德州仪器

丝印：AHCT14MEP；Package：SOIC；HEX SCHMITT-TRIGGER INVERTER

Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of –55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† EPIC (Enhanced-Performance Implanted CMOS) Process

文件：703.87 Kbytes 页数：9 Pages

TI

德州仪器

丝印：AHT14EP；Package：TSSOP；HEX SCHMITT-TRIGGER INVERTER

Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of –55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† EPIC (Enhanced-Performance Implanted CMOS) Process

文件：703.87 Kbytes 页数：9 Pages

TI

德州仪器