SN74ABT863DWR.B中文资料德州仪器数据手册PDF规格书

State-of-the-Art EPIC-IIBE BiCMOS Design

Significantly Reduces Power Dissipation

Typical VOLP (Output Ground Bounce) < 1 V

at VCC = 5 V, TA = 25°C

High-Impedance State During Power Up

and Power Down

High-Drive Outputs (–32-mA IOH, 64-mA IOL)

Latch-Up Performance Exceeds 500 mA Per

JESD 17

ESD Protection Exceeds 2000 V Per

MIL-STD-883, Method 3015; Exceeds 200 V

Using Machine Model (C = 200 pF, R = 0)

Package Options Include Plastic

Small-Outline (DW), Shrink Small-Outline

(DB) Packages, and Thin Shrink

Small-Outline (PW), Ceramic Chip Carriers

(FK), Plastic (NT), and Ceramic (JT) DIPs

description

The ’ABT863 devices are 9-bit transceivers

designed for asynchronous communication

between data buses. The control-function

implementation allows for maximum flexibility in

timing.

These devices allow noninverted data

transmission from the A bus to the B bus or from

the B bus to the A bus, depending on the logic

levels at the output-enable (OEAB and OEBA)

inputs.

The outputs are in the high-impedance state

during power up and power down. The outputs

remain in the high-impedance state while the

device is powered down.

When VCC is between 0 and 2.1 V, the device is

in the high-impedance state during power up or

power down. However, to ensure the

high-impedance state above 2.1 V, OE should be

tied to VCC through a pullup resistor; the minimum

value of the resistor is determined by the

current-sinking capability of the driver.

The SN54ABT863 is characterized for operation over the full military temperature range of –55°C to 125°C.

The SN74ABT863 is characterized for operation from –40°C to 85°C.