丝印：ABT652A；Package：SOIC；OCTAL REGISTERED TRANSCEIVERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounc

文件：404.67 Kbytes 页数：19 Pages

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德州仪器

OCTAL REGISTERED TRANSCEIVERS WITH 3-STATE OUTPUTS

文件：450.93 Kbytes 页数：20 Pages

TI

德州仪器

OCTAL REGISTERED TRANSCEIVERS WITH 3-STATE OUTPUTS

文件：498.84 Kbytes 页数：23 Pages

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德州仪器

OCTAL REGISTERED TRANSCEIVERS WITH 3-STATE OUTPUTS

文件：621.94 Kbytes 页数：22 Pages

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德州仪器