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SN74ABT16823DGGRG4

18-BIT BUS-INTERFACE FLIP-FLOPS WITH 3-STATE OUTPUTS

Members of the Texas Instruments WidebusE Family State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation High-Impedance State During Power Up and Power Down ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R

文件:781.54 Kbytes 页数:22 Pages

TI

德州仪器

SN74ABT16823DGGRG4.B

18-BIT BUS-INTERFACE FLIP-FLOPS WITH 3-STATE OUTPUTS

Members of the Texas Instruments WidebusE Family State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation High-Impedance State During Power Up and Power Down ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R

文件:781.54 Kbytes 页数:22 Pages

TI

德州仪器

SN74ABT16823DGGRG4.B

丝印:ABT16823;Package:TSSOP;18-BIT BUS-INTERFACE FLIP-FLOPS WITH 3-STATE OUTPUTS

Members of the Texas Instruments WidebusE Family State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation High-Impedance State During Power Up and Power Down ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R

文件:781.19 Kbytes 页数:22 Pages

TI

德州仪器

SN74ABT16823DGVR

丝印:AH823;Package:TVSOP;18-BIT BUS-INTERFACE FLIP-FLOPS WITH 3-STATE OUTPUTS

Members of the Texas Instruments WidebusE Family State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation High-Impedance State During Power Up and Power Down ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R

文件:781.19 Kbytes 页数:22 Pages

TI

德州仪器

SN74ABT16823DGVR

丝印:AH823;Package:TVSOP(DGV);18-BIT BUS-INTERFACE FLIP-FLOPS WITH 3-STATE OUTPUTS

Members of the Texas Instruments WidebusE Family State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation High-Impedance State During Power Up and Power Down ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R

文件:781.54 Kbytes 页数:22 Pages

TI

德州仪器

SN74ABT16823DGVR.B

丝印:AH823;Package:TVSOP(DGV);18-BIT BUS-INTERFACE FLIP-FLOPS WITH 3-STATE OUTPUTS

Members of the Texas Instruments WidebusE Family State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation High-Impedance State During Power Up and Power Down ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R

文件:781.54 Kbytes 页数:22 Pages

TI

德州仪器

SN74ABT16823DGVR.B

丝印:AH823;Package:TVSOP;18-BIT BUS-INTERFACE FLIP-FLOPS WITH 3-STATE OUTPUTS

Members of the Texas Instruments WidebusE Family State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation High-Impedance State During Power Up and Power Down ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R

文件:781.19 Kbytes 页数:22 Pages

TI

德州仪器

SN74ABT16823DL

丝印:ABT16823;Package:SSOP;18-BIT BUS-INTERFACE FLIP-FLOPS WITH 3-STATE OUTPUTS

Members of the Texas Instruments WidebusE Family State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation High-Impedance State During Power Up and Power Down ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R

文件:781.19 Kbytes 页数:22 Pages

TI

德州仪器

SN74ABT16823DL.B

丝印:ABT16823;Package:SSOP;18-BIT BUS-INTERFACE FLIP-FLOPS WITH 3-STATE OUTPUTS

Members of the Texas Instruments WidebusE Family State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation High-Impedance State During Power Up and Power Down ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R

文件:781.19 Kbytes 页数:22 Pages

TI

德州仪器

SN74ABT16823DL.B

18-BIT BUS-INTERFACE FLIP-FLOPS WITH 3-STATE OUTPUTS

Members of the Texas Instruments WidebusE Family State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation High-Impedance State During Power Up and Power Down ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R

文件:781.54 Kbytes 页数:22 Pages

TI

德州仪器

技术参数

  • Input type:

    TTL

  • Output type:

    TTL

  • VCC(Min)(V):

    4.5

  • VCC(Max)(V):

    5.5

  • IOL(Max)(mA):

    64

  • IOH(Max)(mA):

    -32

  • Rating:

    Catalog

  • Package Group:

    SSOP

供应商型号品牌批号封装库存备注价格
24+
3000
自己现货
询价
TMS
06+
SOIC
1000
自己公司全新库存绝对有货
询价
TI
24+/25+
199
原装正品现货库存价优
询价
TI
01+
SSOP/56
230
原装现货海量库存欢迎咨询
询价
TI
SSOP56
68500
一级代理 原装正品假一罚十价格优势长期供货
询价
TI德州仪器
22+
24000
原装正品现货,实单可谈,量大价优
询价
TI/德州仪器
2402+
SSOP56
8324
原装正品!实单价优!
询价
TI
24+
SOP
380
只做原装,欢迎询价,量大价优
询价
TI
25+
SOP
380
全新现货
询价
TI
24+
SSOP
7860
原装现货假一罚十
询价
更多SN74ABT16823供应商 更新时间2026-1-30 16:01:00