Pocket Data Book

文件：6.00663 Mbytes 页数：794 Pages

TI

德州仪器

丝印：SN74ABT2244AN；Package：SOIC；OCTAL BUFFERS AND LINE/MOS DRIVERS WITH 3-STATE OUTPUTS

Output Ports Have Equivalent 25-W Series Resistors, So No External Resistors Are Required ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 State-of-the-Art EPIC-I

文件：978.22 Kbytes 页数：24 Pages

TI

德州仪器

丝印：SN74ABT2244AN；Package：PDIP；OCTAL BUFFERS AND LINE/MOS DRIVERS WITH 3-STATE OUTPUTS

Output Ports Have Equivalent 25-W Series Resistors, So No External Resistors Are Required ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 State-of-the-Art EPIC-I

文件：978.22 Kbytes 页数：24 Pages

TI

德州仪器

丝印：SN74ABT533AN；Package：PDIP；OCTAL TRANSPARENT D-TYPE LATCHES WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce)

文件：999.4 Kbytes 页数：18 Pages

TI

德州仪器

丝印：SN74ABT533AN；Package：PDIP；OCTAL TRANSPARENT D-TYPE LATCHES WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce)

文件：999.4 Kbytes 页数：18 Pages

TI

德州仪器

丝印：SN74ABT534AN；Package：PDIP；OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce)

文件：860.39 Kbytes 页数：21 Pages

TI

德州仪器

丝印：SN74ABT534AN；Package：PDIP；OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce)

文件：860.39 Kbytes 页数：21 Pages

TI

德州仪器

丝印：SN74ABT540N；Package：PDIP；OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounc

文件：818.44 Kbytes 页数：18 Pages

TI

德州仪器

丝印：SN74ABT540N；Package：PDIP；OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounc

文件：818.44 Kbytes 页数：18 Pages

TI

德州仪器

丝印：SN74ABT620N；Package：PDIP；OCTAL BUS TRANSCEIVERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JESD 17 Typical VOLP (Output Ground Bounce)

文件：240.68 Kbytes 页数：12 Pages

TI

德州仪器