SN65C1168EMPWTSEP中文资料德州仪器数据手册PDF规格书

1 Features

1• VID V62/19606

• Radiation hardened

– Single event latch-up (SEL) immune to 43

MeV-cm2/mg at 125°C

– ELDRS-free to 30 krad(Si)

– Total ionizing dose (TID) RLAT for every wafer

lot up to 20 krad(Si)

• Space Enhanced Plastic

– Controlled baseline

– Gold wire

– NiPdAu lead finish

– One assembly and test site

– One fabrication site

– Available in military (–55°C to 125°C)

temperature range

– Extended product life cycle

– Extended product-change notification

– Product traceability

– Enhanced mold compound for low outgassing

• Meet or exceed standards TIA/EIA-422-B and ITU

recommendation V.11

• Operate from single 5-V power supply

• ESD protection for RS-422 bus pins

– ±12-kV human-body model (HBM)

– ±8-kV IEC 61000-4-2, contact discharge

– ±8-kV IEC 61000-4-2, air-gap discharge

• Low-pulse skew

• Receiver input impedance . . . 17 kΩ (typical)

• Receiver input sensitivity . . . ±200 mV

• Receiver common-mode input voltage range of

–7 V to 7 V

• Glitch-free power-up/power-down protection

2 Applications

• Support low earth orbit space applications

• Satellite communications

• AC and servo motor drives

3 Description

The SN65C1168E-SEP consists of dual drivers and

dual receivers with ±12-kV ESD (HBM) and ±8-kV

ESD (IEC61000-4-2 Air-Gap Discharge and Contact

Discharge) for RS-422 bus pins. The device meets

the requirements of TIA/EIA-422-B and ITU

recommendation V.11. Some parameters do not meet

all TIA/EIA-422-B and ITU recommendation V.11

requirements after 20-krad(Si) TID exposure.

The SN65C1168E-SEP drivers have individual activehigh

enables.