SN64BCT757DWR.A技术资料参数市场行情TI-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
SN64BCT757DWR.A	文件：494.34 Kbytes Page：10 Pages	丝印：6BCT757；Package：SOIC；OCTAL BUFFER/DRIVER WITH OPEN-COLLECTOR OUTPUTS BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) High-Impedance State During Power Up and Power Down Open-Collector Outputs Drive Bus Lines or Buffer-Memory Address Registers Package 文件：494.34 Kbytes 页数：10 Pages	TI 德州仪器	TI
SN64BCT757N	文件：71.48 Kbytes Page：5 Pages	OCTAL BUFFER/DRIVER WITH OPEN-COLLECTOR OUTPUTS 文件：71.48 Kbytes 页数：5 Pages	TI 德州仪器	TI
SN64BCT757	文件：71.48 Kbytes Page：5 Pages	OCTAL BUFFER/DRIVER WITH OPEN-COLLECTOR OUTPUTS 文件：71.48 Kbytes 页数：5 Pages	TI 德州仪器	TI
SN64BCT757	文件：944.2 Kbytes Page：11 Pages	OCTAL BUFFER/DRIVER WITH OPEN-COLLECTOR OUTPUTS 文件：944.2 Kbytes 页数：11 Pages	TI 德州仪器	TI
SN64BCT757	文件：494.34 Kbytes Page：10 Pages	OCTAL BUFFER/DRIVER WITH OPEN-COLLECTOR OUTPUTS BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) High-Impedance State During Power Up and Power Down Open-Collector Outputs Drive Bus Lines or Buffer-Memory Address Registers Package 文件：494.34 Kbytes 页数：10 Pages	TI 德州仪器	TI

更多SN64BCT757DWR.A供应商更新时间2025-12-5 15:13:00