SN54SC6T14-SEP

SN54SC6T14-SEP Radiation Tolerant, Hex Schmitt-Trigger Inverters With Integrated Translation

1Features •Vendoritemdrawingavailable,VIDV62/24618 •Totalionizingdosecharacterizedat30krad(Si) –Totalionizingdoseradiationlotacceptance testing(TIDRLAT)foreverywaferlotto30 krad(Si) •Single-eventeffects(SEE)characterized: –Singleeventlatch-up(SEL)immun

SN54SC6T14-SEP

SN54SC6T14-SEP Radiation Tolerant, Hex Schmitt-Trigger Inverters With Integrated Translation

1Features •Vendoritemdrawingavailable,VIDV62/24618 •Totalionizingdosecharacterizedat30krad(Si) –Totalionizingdoseradiationlotacceptance testing(TIDRLAT)foreverywaferlotto30 krad(Si) •Single-eventeffects(SEE)characterized: –Singleeventlatch-up(SEL)immun

SN54SC6T14-SEP

Radiation-tolerant six-bit inverting fixed-direction level translator with Schmitt-trigger inputs; 提供供应商项目图，VID V62/24618\n \n电离辐射总剂量额定值为 30krad(Si) \n \n每个晶圆批次的辐射批次验收测试电离辐射总剂量 (TID RLAT) 额定值高达 30krad (Si)\n \n\n \n单粒子效应 (SEE) 特性： \n \n单粒子锁定 (SEL) 对于线性能量传递 (LET) 的抗扰度 = 43MeV-cm2/mg\n \n单粒子瞬变 (SET) 额定值为 43MeV-cm2/mg\n \n\n \n1.2V 至 5.5V 的宽工作电压范围\n \n5/3.3/2.5/1.8/1.2V VCC 单电源电压转换门 \n \nTTL 兼容输入： \n \n升压转换： \n \n1.8V – 输入为 1.2V\n \n2.5V – 输入为 1.8V\n \n3.3V – 输入为 1.8V、2.5V\n \n5.0V – 输入为 2.5V、3.3V\n \n\n \n降压转换： \n \n 1.2V – 输入为 1.8V、2.5V、3.3V、5.0V\n \n1.8V – 输入为 2.5V、3.3V、5.0V\n \n2.5V – 输入为 3.3V、5.0V\n \n3.3V – 输入为 5.0V\n \n\n \n\n \n\n \n5.5V 容限输入引脚\n \n5V 时，输出驱动高达 25mA\n \n闩锁性能超过 250mA，符合 JESD 17 规范\n \n增强型航天塑料 (SEP) \n \n受控基线\n \n金键合线\n \nNiPdAu 铅涂层\n \n一个封装测试厂\n \n一个制造基地\n \n军用级（-55°C 到 125°C）温度范围\n \n延长了产品生命周期\n \n产品可追溯性\n \n符合 NASAs ASTM E595 释气规格要求;

SN54SC6T14-SEP 器件包含六个具有施密特触发输入的独立反相器且支持扩展电压运行，可实现电平转换。每个逻辑门以正逻辑执行布尔函数 Y = A。输出电平以电源电压 (VCC) 为基准，并支持 1.2V、1.8V、2.5V、3.3V 和 5V CMOS 电平。\n\n该输入经设计，具有较低阈值电路，支持较低电压 CMOS 输入的升压转换（例如 1.2V 输入转换为 1.8V 输出或 1.8V 输入转换为 3.3V 输出）。此外，5V 容限输入引脚可实现降压转换（例如 3.3V 至 2.5V 输出）。

SN54SC6T14-SEP_V01

SN54SC6T14-SEP Radiation Tolerant, Hex Schmitt-Trigger Inverters With Integrated Translation

1Features •Vendoritemdrawingavailable,VIDV62/24618 •Totalionizingdosecharacterizedat30krad(Si) –Totalionizingdoseradiationlotacceptance testing(TIDRLAT)foreverywaferlotto30 krad(Si) •Single-eventeffects(SEE)characterized: –Singleeventlatch-up(SEL)immun

SN54SC6T14MPWTSEP

SN54SC6T14-SEPRadiationTolerant,HexSchmitt-TriggerInvertersWithIntegratedTranslation

1Features •Vendoritemdrawingavailable,VIDV62/24618 •Totalionizingdosecharacterizedat30krad(Si) –Totalionizingdoseradiationlotacceptance testing(TIDRLAT)foreverywaferlotto30 krad(Si) •Single-eventeffects(SEE)characterized: –Singleeventlatch-up(SEL)immun

SN54SC6T14MPWTSEP

SN54SC6T14-SEPRadiationTolerant,HexSchmitt-TriggerInvertersWithIntegratedTranslation

1Features •Vendoritemdrawingavailable,VIDV62/24618 •Totalionizingdosecharacterizedat30krad(Si) –Totalionizingdoseradiationlotacceptance testing(TIDRLAT)foreverywaferlotto30 krad(Si) •Single-eventeffects(SEE)characterized: –Singleeventlatch-up(SEL)immun