SN54AC00-SP Radiation Hardened Quad 2 Input NAND Gate

1 Features • 5962R87549: – Radiation hardness assurance (RHA) up to TID 100 krad (Si) – SEL immune to 86 MeV×cm2/mg • 5962-87549: – Total ionizing dose 50 krad (Si) • 2 V to 6 V VCC operation • Inputs accept voltages to 6 V • Maximum tpd of 7 ns at 5 V 2 Applications • Satellite paylo

文件：745.77 Kbytes 页数：16 Pages

TI

德州仪器

RAD-TOLERANT, QUADRUPLE 2-INPUT POSITIVE-NAND GATE

1FEATURES • 2-V to 6-V VCC Operation • Inputs Accept Voltages to 6 V • Max tpd of 7 ns at 5 V DESCRIPTION/ORDERING INFORMATION The SN54AC00-DIE device contains four independent 2-input NAND gates. Each gate performs the Boolean function of Y = A • B or Y = A + B in positive logic.

文件：159.97 Kbytes 页数：6 Pages

TI

德州仪器

Radiation Hardened Quad 2 Input NAND Gate

文件：103.99 Kbytes 页数：8 Pages

TI

德州仪器

RAD-TOLERANT CLASS V, QUADRUPLE 2-INPUT POSITIVE-NAND GATE

文件：220.62 Kbytes 页数：7 Pages

TI

德州仪器

RAD-TOLERANT, QUADRUPLE 2-INPUT POSITIVE-NAND GATE

文件：248.86 Kbytes 页数：9 Pages

TI

德州仪器

SN54AC00-SP Radiation Hardened Quad 2 Input NAND Gate

文件：193.37 Kbytes 页数：10 Pages

TI

德州仪器

SN54AC00-SP Radiation Hardened Quad 2 Input NAND Gate

文件：193.37 Kbytes 页数：10 Pages

TI

德州仪器

Radiation Hardened Quad 2 Input NAND Gate

文件：103.99 Kbytes 页数：8 Pages

TI

德州仪器

航天类 4 通道、2 输入、2V 至 6V 与非门

The SN54AC00 device contains four independent 2-input NAND gates. Each gate performs the Boolean function of Y = A • B or Y = A + B in positive logic. • 5962R87549: \n• Radiation Hardness Assurance (RHA) up to TID TID 100 krad (Si)\n• SEL/SEU Immune to 86 MeV\n \n• 5962-87549: \n• Total Ionizing Dose 50 krad (Si)\n \n• 2-V to 6-V VCC Operation\n• Inputs Accept Voltages to 6 V\n• Max tpd of 7 ns at 5 V;

TI

德州仪器