SMSA7621-060数据手册分立半导体产品的二极管-射频规格书PDF

描述 Description

The SMSA7621-060 is a silicon, low-barrier N-type Schottkydiode with an ultra-miniature 0201 footprint. This diode may beused in detector circuits, sampling circuits, and mixer circuits.

The low series resistance of this low-barrier diode enables goodperformance as a low-level mixer at frequencies of 24 GHz and77 GHz.

特性 Features

• AEC-Q101 qualified
• Low barrier height
• Suitable for DC thru 24 GHz and 77 GHz
• Low parasitic impedance: CP < 0.05 pF, LS < 0.2 nH
• Low profile, ultra-miniature 0201 SMT package rated MSL1, 260 °C per JEDEC J-STD-020

应用 Application

• Cellular Telematics
• Infotainment
• Remote Keyless Entry
• Space
• Radar
• Instrumentation
• Surveillance Systems
• Electronic Warfare
• Military Communications
• Avionics
• Small Cells
• Macro/Massive MIMO

简介

SMSA7621-060属于分立半导体产品的二极管-射频。由制造生产的SMSA7621-060二极管 - 射频射频二极管是一种双端子半导体器件，只允许一个方向通过电流，而限制反方向的电流。该系列器件用于射频匹配电路以进行电子调谐。二极管类型包括 PIN 型、肖特基型和标准型，反向电压范围为 1 至 15,000 V，电流范围为 10 mA 至 20A。