N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

文件：60.93 Kbytes 页数：2 Pages

SEME-LAB

MOSFETs and JFETs

TT Electronics

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 9.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.1Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：309.65 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

文件：68.34 Kbytes 页数：4 Pages

ADPOW

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

文件：52.1 Kbytes 页数：4 Pages

ADPOW