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3632

VDSLModule

BournsBourns Inc.

伯恩斯(邦士)

AW3632

Highefficiency,lowprofile,fixed5Voutputpumppowersupply

AWINICAWINIC

艾为

AW3632DNR

Highefficiency,lowprofile,fixed5Voutputpumppowersupply

AWINICAWINIC

艾为

BA3632K

Pre/poweramplifierfor1.5Vheadphonestereos

TheBA3632Kisadual-channelpre/powersystemICdesignedfor1.5Vheadphonestereos.ThereisnoneedforDC/DCconversion,andthesystemcanoperateoffasinglebattery.TheICdrawslowcurrent(ICC=2.6mA)toallowlongsetlife. Features 1)Dualpre-amplifierswithautoreversecompat

ROHMRohm Semiconductor

罗姆罗姆半导体集团

C3632

1700WATTS(AC)DC/DCSINGLEOUTPUT

Features •SingleOutput •6Ux42TEx226mm •Weight:10kg

POWERBOX

Powerbox manufactures

DS3632

CMOSDualPeripheralDrivers

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

DS3632

CMOSDualPeripheralDrivers

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

DS3632N

CMOSDualPeripheralDrivers

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

E3632A

ProgrammableDCPowerSupplies

KEYSIGHTKeysight Technologies

德科技(中国德科技(中国)有限公司

E3632S

2C12SOLIDBCFLEXOASFLEXFireAlarm/LifeSafetyCable

GENERALGeneral Electric

通用电气公司美国通用电气公司

FDB3632

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDB3632

N-ChannelPowerTrenchMOSFET

Features ●rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A ●Qg(tot)=84nC(Typ.),VGS=10V ●LowMillerCharge ●LowQRRBodyDiode ●UISCapability(SinglePulseandRepetitivePulse)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

FDB3632

N-ChannelPowerTrenchMOSFET100V,80A,9m?

Features •rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A •Qg(tot)=84nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •Distribute

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDB3632

N-ChannelPowerTrenchMOSFET

Features •rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A •Qg(tot)=84nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •Distribute

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDH3632

N-ChannelPowerTrenchMOSFET

Features •rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A •Qg(tot)=84nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •Distribute

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDH3632

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDI3632

N-ChannelPowerTrenchMOSFET

Features •rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A •Qg(tot)=84nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •Distribute

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDI3632

N-ChannelPowerTrenchMOSFET100V,80A,9m?

Features •rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A •Qg(tot)=84nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •Distribute

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDI3632

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmod

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDP3632

N-ChannelPowerTrenchMOSFET

Features •rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A •Qg(tot)=84nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •Distribute

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

详细参数

  • 型号:

    SML-EL3632SISUGCTR

  • 功能描述:

    标准LED-SMD 3.6x3.2mm SMT LED Red/Green/IR

  • RoHS:

  • 制造商:

    Vishay Semiconductors

  • 封装/箱体:

    0402 LED

  • 大小:

    1 mm x 0.5 mm x 0.35 mm

  • 照明颜色:

    Red

  • 波长/色温:

    631 nm

  • 透镜颜色/类型:

    Water Clear

  • 正向电流:

    30 mA

  • 正向电压:

    2 V

  • 光强度:

    54 mcd

  • 显示角:

    130 deg

  • 系列:

    VLMx1500

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
ROHM(罗姆)
2112+
-
115000
5000个/圆盘一级代理专营品牌!原装正品,优势现货,
询价
Rohm(罗姆)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
ROHM
0.15
21+/22+
45000
Malaysia
询价
ROHM
22+
SML-E1 [1.60 x 0.80 x 0.40 mm]
60000
15年光格 只做原装正品
询价
ROHM
23+
N/A
60000
深圳通
询价
ROHM
21+22+23+
3000
原装正品,原厂渠道,可接受订货
询价
ROHM(罗姆)
23+
0603
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
ROHM-罗姆
24+25+/26+27+
车规-光电器件
143788
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
ROHM
23+
发光二极管
5864
原装原标原盒 给价就出 全网最低
询价
ROHM(罗姆)
23+
6000
询价
更多SML-EL3632SISUGCTR供应商 更新时间2024-5-24 15:00:00