Voltage-Controlled Attenuator Module 100 to 2000 MHz

Description The G30 attenuator is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This design uses three pin diodes to provide a non linear attenuation response across a broadband frequency range. Both TO-8 and Surface Mount

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MA-COM

Voltage-Controlled Attenuator Module 100 to 2000 MHz

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MACOM

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

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VBSEMI

微碧半导体

N-Channel Enhancement Mode Power Mos.FET

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SECOS

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Voltage Controlled Module

The SMG30 attenuator is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This design uses three pin diodes to provide a non linear attenuation response across a broadband frequency range. Both TO-8 and Surface Mount packages are h ·Fast Switching: < 0.2 µsec, 10 to 90% (Typ.) < 1 µsec, 0 to 100% (Typ.)\n·Low VSWR: 1.4:1 (Typ.)\n·High Dynamic Range: 40 dB to 1000 MHz (Typ.);

MACOM

Package：4-SMD 模块；包装：托盘 类别：RF/IF，射频/中频和 RFID 衰减器 描述：ATTENUATOR,SURFACE MOUNT

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MOSFET

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N-Channel Enhancement Mode Power Mos.FET

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