N-Channel Enhancement Mode Mos.FET

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N-Channel Enhancement Mode Mos.FET

文件：145.76 Kbytes 页数：2 Pages

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N-Channel Enhancement Mode Power Mos.FET

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Thyristor

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KERSEMI

THYRISTOR(Through Hole/Non-isolated)

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THYRISTOR(Surface Mount Device/Non-isolated)

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SANREX

三社

Thyristor

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KERSEMI

Voltage Controlled Module

The SMG2 attenuator is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This design uses three pin diodes to provide a non linear attenuation response across a broadband frequency range. Both TO-8 and Surface Mount packages are he ·Available inSurface Mount\n·Low Distortion: > 75 dB (Typ.) at Vcontrol = +15V\n·Low Insertion Loss: 2.3 dB to 1000 MHz Typ.)\n·Low VSWR: < 1.5:1 (Typ.)\n;

MACOM

Package：4-SMD 模块；包装：散装 类别：RF/IF，射频/中频和 RFID 衰减器 描述：AMPLIFIER,SURFACE MOUNT

MACOM Technology Solutions

N-Channel Enhancement Mode Power Mos.FET

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