丝印：GFG；SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

文件：1.08724 Mbytes 页数：5 Pages

SUNMATE

森美特

Single P-Channel MOSFET

■DESCRIPTION SMC2849ES is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in-line power loss needed in small outline surface mount package.

文件：636.97 Kbytes 页数：5 Pages

SEMTRON

Dual N-Channel MOSFET

■DESCRIPTION The SMC2862ESG dual N Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in-line power loss are needed in small outline surface mount pa

文件：532.63 Kbytes 页数：5 Pages

SEMTRON

Single N-Channel MOSFET

■DESCRIPTION SMC2868ESA used trench technology are well suited for high efficiency fast switching applications, this MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, this devices are well suited for applications in the small surface mo

文件：679.31 Kbytes 页数：5 Pages

SEMTRON

Single N-Channel MOSFET

■DESCRIPTION SMC2868ESC used trench technology are well suited for high efficiency fast switching applications, this MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, this devices are well suited for applications in the small surface mo

文件：701.37 Kbytes 页数：5 Pages

SEMTRON

Single N-Channel MOSFET

■DESCRIPTION SMC2868ESD used trench technology are well suited for high efficiency fast switching applications, this MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, this devices are well suited for applications in the small surface mo

文件：549.34 Kbytes 页数：5 Pages

SEMTRON

Dual N-Channel MOSFET

■DESCRIPTION SMC2868ESD6 is the dual N-Channel trench MOSFET are well suited for high efficiency fast switching applications, this MOSFET provide superior fast switching performance, this devices are well suited for applications in the small surface mount package. ■FEATURES VDS=20V, ID=0.8

文件：321.03 Kbytes 页数：5 Pages

SEMTRON

Single N-Channel MOSFET

■DESCRIPTION SMC2868ESN used trench technology are well suited for high efficiency fast switching applications, this MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, this devices are well suited for applications in the small surface mo

文件：692.78 Kbytes 页数：5 Pages

SEMTRON

Single P-Channel MOSFET

■DESCRIPTION SMC2869ESC used trench technology are well suited for high efficiency fast switching applications, this MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, this devices are well suited for applications in the small surfac

文件：330.38 Kbytes 页数：5 Pages

SEMTRON

Single P-Channel MOSFET

■DESCRIPTION SMC2869ESD used trench technology are well suited for high efficiency fast switching applications, this MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, this devices are well suited for applications in the small surface mo

文件：542.2 Kbytes 页数：5 Pages

SEMTRON