丝印：FBA；Package：SMBFlat；1500 W TVS in SMB Flat

Features • Peak pulse power: 1500 W (10/1000 μs) and 10 kW (8/20 μs) • Flat and thin package: 1 mm • Stand-off voltage range: from 5 V to 64 V • Unidirectional type • Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C • Operating Tj max: 175 °C • High power capability at Tj max.: 1100 W

文件：598.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：FBC；Package：SMBFlat；1500 W TVS in SMB Flat

Features • Peak pulse power: 1500 W (10/1000 μs) and 10 kW (8/20 μs) • Flat and thin package: 1 mm • Stand-off voltage range: from 5 V to 64 V • Unidirectional type • Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C • Operating Tj max: 175 °C • High power capability at Tj max.: 1100 W

文件：598.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：FBE；Package：SMBFlat；1500 W TVS in SMB Flat

Features • Peak pulse power: 1500 W (10/1000 μs) and 10 kW (8/20 μs) • Flat and thin package: 1 mm • Stand-off voltage range: from 5 V to 64 V • Unidirectional type • Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C • Operating Tj max: 175 °C • High power capability at Tj max.: 1100 W

文件：598.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：FBI；Package：SMBFlat；1500 W TVS in SMB Flat

Features • Peak pulse power: 1500 W (10/1000 μs) and 10 kW (8/20 μs) • Flat and thin package: 1 mm • Stand-off voltage range: from 5 V to 64 V • Unidirectional type • Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C • Operating Tj max: 175 °C • High power capability at Tj max.: 1100 W

文件：598.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：FBM；Package：SMBFlat；1500 W TVS in SMB Flat

Features • Peak pulse power: 1500 W (10/1000 μs) and 10 kW (8/20 μs) • Flat and thin package: 1 mm • Stand-off voltage range: from 5 V to 64 V • Unidirectional type • Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C • Operating Tj max: 175 °C • High power capability at Tj max.: 1100 W

文件：598.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：FBO；Package：SMBFlat；1500 W TVS in SMB Flat

Features • Peak pulse power: 1500 W (10/1000 μs) and 10 kW (8/20 μs) • Flat and thin package: 1 mm • Stand-off voltage range: from 5 V to 64 V • Unidirectional type • Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C • Operating Tj max: 175 °C • High power capability at Tj max.: 1100 W

文件：598.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：FBP；Package：SMBFlat；1500 W TVS in SMB Flat

Features • Peak pulse power: 1500 W (10/1000 μs) and 10 kW (8/20 μs) • Flat and thin package: 1 mm • Stand-off voltage range: from 5 V to 64 V • Unidirectional type • Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C • Operating Tj max: 175 °C • High power capability at Tj max.: 1100 W

文件：598.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：FBQ；Package：SMBFlat；1500 W TVS in SMB Flat

Features • Peak pulse power: 1500 W (10/1000 μs) and 10 kW (8/20 μs) • Flat and thin package: 1 mm • Stand-off voltage range: from 5 V to 64 V • Unidirectional type • Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C • Operating Tj max: 175 °C • High power capability at Tj max.: 1100 W

文件：598.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：FBS；Package：SMBFlat；1500 W TVS in SMB Flat

Features • Peak pulse power: 1500 W (10/1000 μs) and 10 kW (8/20 μs) • Flat and thin package: 1 mm • Stand-off voltage range: from 5 V to 64 V • Unidirectional type • Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C • Operating Tj max: 175 °C • High power capability at Tj max.: 1100 W

文件：598.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：FBU；Package：SMBFlat；1500 W TVS in SMB Flat

Features • Peak pulse power: 1500 W (10/1000 μs) and 10 kW (8/20 μs) • Flat and thin package: 1 mm • Stand-off voltage range: from 5 V to 64 V • Unidirectional type • Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C • Operating Tj max: 175 °C • High power capability at Tj max.: 1100 W

文件：598.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体