SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

文件：356.86 Kbytes 页数：3 Pages

SHUNYE

顺烨电子

600Watts Surface Mount Transient Voltage Suppressor

文件：192.98 Kbytes 页数：4 Pages

LUGUANG

鲁光电子

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS

文件：499.23 Kbytes 页数：4 Pages

DGNJDZ

南晶电子

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS

文件：2.02414 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

Low profile package

文件：495.04 Kbytes 页数：5 Pages

SEMITECH

海晨启半导体

SURFACE MOUNT TRANSIENT VOLTAGE RECTIFIERS

FEATURES : 400W surge capability at 1ms Excellent clamping capability Low zener impedance Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) Typical I R less then 1mA above 10V

文件：1.67044 Mbytes 页数：3 Pages

TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd

泰迪斯电子深圳市泰迪斯电子科技有限公司

丝印：ABX；Package：DO-214AC；Transient Voltage Suppressor

Features: • Optimized for LAN Protection Applications • Low Profile Package With Built-In Strain Relief For Surface Mounted Applications • Low Incremental Surge Resistance, Excellent Clamping Capability • 400W Peak Pulse Power Capability with a 10/1,000μs Wave Form, Repetition Rate (duty cycle

文件：531.36 Kbytes 页数：5 Pages

MULTICOMP

易络盟

Transient Voltage Suppressors (TVS)

Features ■ For surface mounted applications in order to optimize board space ■ Low profile package ■ Glass passivated junction ■ Low inductance ■ Excellent clamping capability ■ 400W peak pulse power capability at 10/1000μs waveform, repetition rate (duty cycle): 0.01% ■ Fast response

文件：506.53 Kbytes 页数：9 Pages

YAGEO

国巨

丝印：BXT；Package：DO-214AC；400W Surface Mount Transient Voltage Suppressors

Features Glass passivated or planar junction Excellent clamping capability Repetition rate (duty cycle): 0.01 Low profile package and low inductance 400W Peak Pulse power capability at 10×1000μs waveform Fast response time: typically less than 1.0ps from 0V to VBR min High temperature solde

文件：3.2336 Mbytes 页数：7 Pages

UNSEMI

优恩半导体

丝印：MBX；Package：DO-214AC；400W Transient Voltage Suppressor (TVS) protection device

Description and applications This device has the ability to clamp dangerous high voltage, short term transients such as produced by directed or radiated electrostatic discharge phenomena before entering sensitive component regions of a circuit design. Response time of clamping action is virtual

文件：489.87 Kbytes 页数：6 Pages

Microsemi

美高森美