Dual N-Channel Enhancement Mode MOSFET

文件：235.53 Kbytes 页数：10 Pages

SINOPWER

大中集成电路

FAST MRI PROTECTION DIODES

文件：233.37 Kbytes 页数：6 Pages

MICROSEMI

美高森美

DUAL ULTRA LOW MAGNETIC MOMENT FAST DIODES FOR MRI APPLICATIONS

文件：315.72 Kbytes 页数：5 Pages

MICROSEMI

美高森美

Schottky Barrier Diodes TM Ultra High Drive Monolithic

DESCRIPTION Microsemi’s Schottky Barrier devices are currently available in the eight junction ring quad configuration. Devices are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic packages. Monolithic devices are recommended for highest frequency, broad

文件：164.79 Kbytes 页数：2 Pages

MICROSEMI

美高森美

14dBm to 20dBm LO Buffers with 짹1dB Variation

General Description The MAX9989 and MAX9990 LO buffers provide the high output (+14dBm to +20dBm) necessary to drive the LO inputs of high-linearity passive mixers, while offering 40dB reverse isolation to prevent LO pulling. The MAX9989 is internally matched for the cellular/GSM bands, and the M

文件：273.68 Kbytes 页数：12 Pages

MAXIM

美信

14dBm to 20dBm LO Buffers with 짹1dB Variation

General Description The MAX9989 and MAX9990 LO buffers provide the high output (+14dBm to +20dBm) necessary to drive the LO inputs of high-linearity passive mixers, while offering 40dB reverse isolation to prevent LO pulling. The MAX9989 is internally matched for the cellular/GSM bands, and the M

文件：273.68 Kbytes 页数：12 Pages

MAXIM

美信