SM72482MAE-4SLASHNOPB中文资料德州仪器数据手册PDF规格书

1FEATURES

2• Renewable Energy Grade

• Independently Drives Two N-Channel

MOSFETs

• Compound CMOS and Bipolar Outputs Reduce

Output Current Variation

• 5A Sink, 3A Source Current Capability

• Two Channels Can be Connected in Parallel to

Double the Drive Current

• Independent Inputs (TTL Compatible)

• Fast Propagation Times (25 ns Typical)

• Fast Rise and Fall Times (14 ns Rise, 12 ns

Fall With 2 nF Load)

• Available in Dual Noninverting, Dual Inverting,

and Combination Configurations

• Supply Rail Under-Voltage Lockout Protection

(UVLO)

• SM72482 UVLO Configured to Drive PFET

Through OUT_A and NFET Through OUT_B

• Pin Compatible With Industry Standard Gate

Drivers

• Packages

– SOIC

– Thermally Enhanced VSSOP

APPLICATIONS

• Synchronous Rectifier Gate Drivers

• Switch-mode Power Supply Gate Driver

• Solenoid and Motor Drivers

DESCRIPTION

The SM72482 Dual Gate Driver replaces industry

standard gate drivers with improved peak output

current and efficiency. Each “compound” output driver

stage includes MOS and bipolar transistors operating

in parallel that together sink more than 5A peak from

capacitive loads. Combining the unique

characteristics of MOS and bipolar devices reduces

drive current variation with voltage and temperature.

Under-voltage lockout protection is also provided.

The drivers can be operated in parallel with inputs

and outputs connected to double the drive current

capability. This device is available in the SOIC

package.